Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Lg Innotek Co., Ltd.

Seoul National University

Chang Bae Lee

Seung Wook Park

Young Gwan Ko

Myung Sam Kang

Jin Gu Kim

Christian Romero

Yong Koon Lee

Young Chan Ko

Jin Su Kim

Young Do Kweon

Mi Jin Park

Dong Hwan Lee

Min Hee Jang

Young Seuck Yoo

Ji Hyun Lee

No Il Park

Jae Shin Lee

Deuk Hee Park

Sang Hyun Cha

Dong Jae Shin

Youn Joong Lee

Yoon Su Kim

Jin Hyuck Yang

Jong Yun Lee

Kyoung Ho Ha

Seon Hee Moon

Jae Kul Lee

Yong Jin Seol

Seong Gu Kim

Yong Hwack Shin

Sang Joon Shin

Chang Gyun Shin

Dong Sik Shim

Seung Min Baek

Doo Sung Jung

Jang Su Kim

Jung Ho Cha

Byeong Uk Im

Won Jong Eun

Jin Wook Shin

A semiconductor package including a core structure, in which a first and second semiconductor chips and passive components are embedded, a connection structure disposed on a first side of the core structure, and including a redistribution layer electrically connected to the first and second semiconductor chips and the passive components, and a metal pattern layer and a backside wiring layer disposed on a second side of the core structure opposing the first side, and spaced apart from each other. The core structure includes a first metal layer surrounding the first semiconductor chip, a second metal layer surrounding the first semiconductor chip, and the first metal layer, a third metal layer surrounding the second semiconductor chip, and a fourth metal layer surrounding the second semiconductor chip, the passive components, and the third metal layer, and each of the first to fourth metal layers is electrically connected to the metal pattern layer.

Semiconductor package and antenna module comprising the same

A method including forming a frame having an opening, forming a first metal layer, forming a first encapsulant, forming an insulation layer on the first metal layer, forming a first through-hole and a second through-hole penetrating the insulation layer and the first encapsulant, forming a second metal layer and a third metal layer, forming a second encapsulant, forming a first metal via and a second metal via penetrating the second encapsulant and a metal pattern layer on the second encapsulant, and forming a connection structure. The first metal layer and the second metal layer respectively are formed to extend to a surface of each of the first encapsulant and the frame, facing the metal pattern layer, and the first metal layer and the second metal layer are connected to the metal pattern layer through the first metal via and the second metal via having heights different from each other.

Provided are a flap drive device and a rotorcraft blade, and more particularly, a flap drive device using a two-section link mechanism, which may be applied to a rotorcraft blade, and a rotorcraft blade including the same.

Flap drive device and blades of rotary-wing aircraft

An optical beam steering device may include a tunable laser diode configured to emit laser beams and an antenna that includes a grating structure and is configured to convert the laser beams to a linear light source based on the grating structure. The tunable laser diode may emit a first laser beam having a first wavelength, and emit a second laser beam having a second wavelength, the second wavelength different from the first wavelength. The antenna may receive the first laser beam and, in response, output a first linear light source having a first emission angle with a surface of the antenna. The antenna may further receive the second laser beam and, in response, output a second linear light source having a second emission angle with the surface of the antenna, the second emission angle different from the first angle.

Optical beam steering devices and sensor systems including the same

A semiconductor package includes a core structure having a first through-hole and including a frame having an opening, a passive component disposed in the opening, a first encapsulant covering the frame and the passive component, a first metal layer disposed on an inner surface of the first through-hole, and a second metal layer disposed on an inner surface of the opening; a first semiconductor chip disposed in the first through-hole and having a first connection pad; a second encapsulant covering the core structure and the first semiconductor chip; a connection structure disposed on the core structure and the first semiconductor chip and including a redistribution layer; and a metal pattern layer disposed on the second encapsulant. The first and second metal layers are connected to the metal pattern layer through first and second metal vias having heights different from each other.

A semiconductor package includes a connection structure including a first insulation layer, a second insulation layer, first and second wiring layers, and first and second connection vias. A core structure including a core member is on the first insulation layer. A first through-hole passes through the core member. Passive components are on the first insulation layer in the first through-hole and connected to the first wiring layer through the first connection via. A first encapsulant covers at least a portion of the passive components. A second through-hole passes through the core structure and the first insulation layer. A semiconductor chip is on the second insulation layer in the second through-hole and is connected to the second wiring layer through the second connection via. A second encapsulant covers at least a portion of the semiconductor chip.

Semiconductor package

A fan-out semiconductor package includes: a semiconductor chip; an encapsulant encapsulating at least portions of the semiconductor chip; and a first connection member disposed on the semiconductor chip and including a first redistribution layer electrically connected to the connection pads and a second redistribution layer electrically connected to the connection pads and disposed on the first redistribution layer. The first redistribution layer includes a first pattern having a plurality of degassing holes, the second redistribution layer includes a second pattern having a first line portion having a first line width and a second line portion connected to the first line portion and having a second line width greater than the first line width, and the second line portion overlaps at least one of the plurality of degassing holes when being projected in a direction perpendicular to the active surface.

Fan-out semiconductor package

A fan-out semiconductor package includes a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole of the first interconnection member and having an active surface having connection pads disposed thereon and an inactive surface opposite the active surface; an encapsulant encapsulating at least some portions of the first interconnection member and the semiconductor chip; and a second interconnection member disposed on the first interconnection member and the semiconductor chip. The first interconnection member and the second interconnection member respectively include a plurality of redistribution layers electrically connected to the connection pads of the semiconductor chip, and the semiconductor chip has a groove defined in the active surface and between a peripheral edge of the semiconductor chip and the connection pads of the semiconductor chip.

There is provided a shield part including: a magnetic laminate formed by laminating a plurality of magnetic layers and having a first surface and a second surface; a coil pattern formed on the first surface; and a first lead part formed at an end portion of a central portion of the coil pattern and a second lead part formed outside of the coil pattern, wherein a portion of the second surface is removed to form a recess, the first lead part is electrically connected to the second lead part by a conductive material disposed in the recess and a first via formed in the magnetic laminate in a lamination direction, and the second lead part is electrically connected to the first lead part by the conductive material disposed in the recess and a second via formed in the magnetic laminate in the lamination direction.

Shield part, method of fabricating the same, and contactless power transmission device having the shield part

The present invention relates to an electrode structure which includes: a base substrate; a seed layer provided on one or both surfaces of the base substrate; an electroplating layer provided on the seed layer; and barriers discontinuously provided between the seed layer and the electroplating layer.

Electrode structure

Disclosed herein are a printed circuit board and a method of manufacturing the same. The printed circuit board includes: a core layer having a first circuit wiring layer formed on one surface or both surfaces thereof; an insulating layer laminated, as at least one layer, on one surface or both surfaces of the core layer; and a second circuit wiring layer formed on one surface of the insulating layer, wherein a conductive core is included in upper and lower insulating layers contacting the second circuit wiring layer requiring an electromagnetic wave shielding, or the conductive core is included in the insulating layer or the core layer contacting the first circuit wiring layer requiring the electromagnetic wave shielding.

Printed circuit board and method of manufacturing the same

Disclosed herein is an optical module including: an optical element mounted on a substrate; and an optical connector mounted corresponding to the optical element so as to change a path of an optical signal of the optical element and transfer the optical signal having the changed path. The optical module may provide various communication performances using an optical connector in which first and second connector parts are optically coupled stably to each other. Particularly, the optical module does not have a silicon optical bench (SiOB) as a medium, thereby making it possible to reduce a thickness of a product.

Optical connector and optical module having the same

Disclosed herein is a plug via stacked structure including: a through hole plating layer plated on a through hole inner wall and around top and bottom of a through hole at thickness t; a via plug filled in an inner space of the through hole plating layer; a circuit pattern formed over the top and bottom of the through hole plating layer and the via plug and making a thickness t' formed on the through hole plating layer thicker than a thickness t; and a stacked conductive via filled in a via hole formed on the top of the through hole and formed at thickness &#x3b1; from a top of the circuit pattern, wherein T&#x2266;t&#x2033;+&#x3b1; is satisfied, T represents a sum of the thicknesses t and t&#x2032; and t&#x2033; is a thickness of a portion of the circuit pattern formed on the via plug.

Plug via stacked structure, stacked substrate having via stacked structure and manufacturing method thereof

Disclosed herein is a circuit board including: a base substrate including a via for power and a via pad for power connected to the via for power; and an insulating layer formed on the base substrate and including a dummy pattern formed in a region facing the via pad for power.

Circuit board

Disclosed herein are a common mode filter and a method for manufacturing the same. The common mode filter includes a first insulator sheet; a first circuit layer having a first-layered first coil and a first-layered second coil alternately and separately arranged; a second insulator sheet laminated on the first circuit layer; and a second circuit layer having a second-layered first coil and a second-layered second coil alternately and separately arranged, the second-layered first coil being connected to the first-layered first coil and the second-layered second coil being connected to the first-layered second coil through the plurality of penetration holes.

Growing community of inventors

Gyunggi-do, South Korea

Chang Bae Lee