Electronics and Telecommunications Research Institute

Gwangju Institute of Science and Technology

Chang Auck Choi

Myung Lae Lee

Chi Hoon Jun

Youn Tae Kim

Gunn Hwang

Chang Han Je

Chang Kyu Kim

Woo Seok Yang

Byoung Gon Yu

Sang Hoon Cheon

Ho Jun Ryu

Seong Mok Cho

Sung Sik Lee

Yun Tae Kim

Won Ick Jang

Sung Hae Jung

Jong Hyun Lee

Moon Youn Jung

Se Ho Park

Hyeon Bong Pyo

Sung Weon Kang

Sang Choon Ko

Young Jun Kim

Dong Ho Shin

Seok Hwan Moon

Jong Tae Baek

Yong Il Lee

Min Soo Kim

Sung Q Lee

Kwang Hyo Chung

Ji Man Park

Dae Sik Lee

Dae Yong Kim

Bo Woo Kim

Hae Sik Yang

Duck Gun Park

Hyung Joun Yoo

Chang-Kyu Kim

Sung Sik Yun

Dae Hun Jeong

Jae Yong An

Provided is a pressure sensor including a substrate having a cavity therein, a partition wall disposed in the substrate to surround the cavity, a substrate insulation layer disposed on the top surface of the substrate to cover the cavity, a sensing unit disposed on the substrate insulation layer, and an encapsulation layer disposed on the substrate insulation layer to cover the sensing unit. The cavity may extend from a top surface toward a bottom surface of the substrate, the partition wall may have an inner sidewall exposed by the cavity, and at least a portion of the sensing unit may overlap the cavity when viewed in a plan view.

Pressure sensor and a method for manufacturing the same

There is provided a high resolution circuit for converting a capacitance-to-time deviation including a capacitance deviation detecting unit generating two detection signals having a phase difference corresponding to variations of capacitance of an micro electro mechanical system (MEMS) sensor; a capacitance deviation amplifying unit dividing frequencies of the two detection signals to amplify the phase difference corresponding to the capacitance deviation; and a time signal generating unit generating a time signal having a pulse width corresponding to the amplified phase difference.

High resolution circuit for converting capacitance-to-time deviation

An apparatus for preventing stiction of a three-dimensional MEMS (microelectromechanical system) microstructure, the apparatus including: a substrate; and a plurality of micro projections formed on a top surface of the substrate with a predetermined height in such a way that a cleaning solution flowing out from the microstructure disposed thereabove is discharged.

Apparatus for preventing stiction of MEMS microstructure

A method of manufacturing a tunable wavelength optical filter. The method includes steps of forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate; sequentially laminating conductive silicon films and oxide films for defining a mirror region on the first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror; sequentially laminating conductive silicon films and oxide films for defining the mirror region on a second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror and forming an optical tuning space between the lower mirror and the upper mirror and etching the first sacrificial oxide film and the second sacrificial oxide film such that the lower mirror is floated on the semiconductor substrate.

Tunable-wavelength optical filter and method of manufacturing the same

A three-dimensional inclination angle calculation circuit is provided. The three-dimensional inclination angle calculation circuit includes: X-axis, Y-axis, and Z-axis vibration sensors which change X-axis, Y-axis, and Z-axis electrostatic capacitances according to three-dimensional positions of a measured plane with respect to a reference plane, respectively; X-axis, Y-axis, and Z-axis position value acquisition units which acquire X-axis, Y-axis, and Z-axis position values corresponding to the X-axis, Y-axis, and Z-axis electrostatic capacitances, respectively; and an inclination angle calculation unit which calculates an inclination angle of the measured plane with respect to the reference plane based on the X-axis, Y-axis, and Z-axis position values. Accordingly, it is possible to very easily calculate an inclination angle according to a three-dimensional position of a to-be-measured apparatus by using an existing vibration sensor.

Circuit for calculating a three-dimensional inclination angle

Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.

High-sensitivity z-axis vibration sensor and method of fabricating the same

A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semi-conductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane.

Micro piezoresistive pressure sensor and manufacturing method thereof

A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.

Resistive material for bolometer, bolometer for infrared detector using the material, and method of manufacturing the bolometer

Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale. The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.

Humidity sensor and method of manufacturing the same

There is provided a bidirectional readout circuit for detecting direction and amplitude of an oscillation sensed at a capacitive microelectromechanical system (MEMS) accelerometer, the bidirectional readout circuit converting capacitance changes of the capacitive MEMS accelerometer into a time change amount by using high resolution capacitance-to-time conversion technology and outputting the time change amount as the direction and the amplitude of the oscillation by using time-to-digital conversion (TDC) technology, thereby detecting not only the amplitude of the oscillation but also the direction thereof, which is capable of being applied to various MEMS sensors.

Bidirectional readout circuit for detecting direction and amplitude of capacitive MEMS accelerometers

There is provided a micromachined sensor for measuring a vibration, based on silicone micromachining technology, in which a conductor having elasticity is connected to masses moving due to a force generated by the vibration and the vibration is measured by using induced electromotive force generated due to the conductor moving in a magnetic field.

Micromachined sensor for measuring vibration

Provided is a loop type micro heat transport device including: a lower plate having a reservoir for storing operating fluid at its upper surface, an evaporating part spaced apart from the reservoir to evaporate the operating fluid, and a condensing part for condensing vapor evaporated from the evaporating part; and an upper plate engaged with an upper surface of the lower plate and formed at a position corresponding to the evaporating part and the condensing part, and including a vapor space having a vapor line through which the vapor evaporated from the evaporating part is transported to the condensing part, wherein the operating fluid is circulated through the reservoir, the evaporating part, and the condensing part. Therefore, it is possible to remarkably improve productivity since its simple structure helps to make the manufacture simple, as well as to improve cooling performance and enabling long distance heat transport.

Loop type micro heat transport device

The present invention relates to a programmable mask used in a photolithography process for fabricating a biomolecule array and a method of fabricating a biomolecule array using the same and, more particularly, to a programmable mask which can increase a contrast ratio of transmittance versus shielding of light incident to a liquid crystal which constitutes each pixel by irradiating parallel ultraviolet ('UV') light generated from an external parallel light exposure device to a certain cell and using a vertically aligned liquid crystal panel or an LC panel having no spacer, and a method of fabricating a biomolecule array using the same.

Programmable mask and method of fabricating biomolecule array using the same

In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.

Infrared detection sensor and method of fabricating the same

Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.

Growing community of inventors

Daejeon, South Korea

Chang Auck Choi