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Globalfoundries U.S. 2 LLC

Chandrasekharan Kothandaraman

Anthony J Annunziata

Deok-Kee Kim

Subramanian Srikanteswara Iyer

John Matthew Safran

Nathan P Marchack

Pouya Hashemi

Byeongju Park

Chung H Lam

William K Henson

Dan Moy

Norman Whitelaw Robson

Bruce Bennett Doris

Dureseti Chidambarrao

Eugene John O'Sullivan

Sami Rosenblatt

Kangguo Cheng

Edward P Maciejewski

William R Tonti

John Atkinson Fifield

Chengwen Pei

Karl Robert Erickson

Phil Christopher Paone

Roger Allen Booth, Jr

Philip Louis Trouilloud

Troy Lawrence Graves-Abe

Alexander Reznicek

Toshiaki Kirihata

Qinghuang Lin

Babar Ali Khan

Eduard Albert Cartier

Xiao Hu Liu

William Vincent Huott

Stephen Mark Rossnagel

Robert L Wisnieff

Jonathan Zanhong Sun

Mark B Ketchen

Geoffrey W Burr

Gen Pei Lauer

Adam J McPadden

Christy Sensenich Tyberg

Manjul Bhushan

Uma Srinivasan

Stephen Wu

Takashi Ando

Mukta G Farooq

Chung-Hsun Lin

Herbert Lei Ho

Daeik Daniel Kim

Matthew Joseph Breitwisch

Brian Joseph Greene

Thomas M Shaw

Hiroyuki Miyazoe

Naigang Wang

Rasit Onur Topaloglu

Anthony Richard Bonaccio

Dennis Merton Newns

Anil Kumar Chinthakindi

Kenneth Jay Stein

Bruce Gordon Elmegreen

Lia Krusin-Elbaum

Dimitri Houssameddine

Joyce C Liu

Matthias Georg Gottwald

Adam M Pyzyna

Yan Zun Li

Eric Raymond Evarts

Sundar Kumar Iyer

Derek H Leu

Virat Vasav Mehta

Lawrence Alfred Clevenger

Sampath Purushothaman

Ping-Chuan Wang

Geng Wang

Zhong-Xiang He

Timothy Dooling Sullivan

Xiangdong Chen

Douglas Duane Coolbaugh

Robert Mark Rassel

John Ryan Sporre

Conal Eugene Murray

John Kenneth DeBrosse

Chandrasekhar Narayan

Fen Chen

Ebenezer E Eshun

Ravi Mahendra Todi

Robert Hannon

Hongwen Yan

Janusz Jozef Nowak

Xiaojun Yu

Ephrem G Gebreselasie

Gregory J Fredeman

Gerard M Salem

Danny Shum

Hoki Kim

John A Griesemer

Suyog Gupta

Christopher N Collins

Michael S Cranmer

Kai Xiu

An approach to provide a structure of a double magnetic tunnel junction device with two spacers that includes a bottom magnetic tunnel junction stack, a spin conducting layer on the bottom magnetic tunnel junction stack, a top magnetic tunnel junction stack on the spin conduction layer, a first dielectric spacer on sides of the top magnetic tunnel junction stack and a portion of a top surface of the spin conduction layer, and a second dielectric spacer on the first spacer. The double magnetic tunnel device includes the top magnetic tunnel junction stack with a width that is less than the width of the bottom magnetic tunnel junction stack.

Dual spacer for double magnetic tunnel junction devices

A semiconductor device including a second magnetic tunnel junction stack aligned above a spin conductor layer above a first magnetic junction stack, a sidewall dielectric surrounding the second magnetic tunnel junction stack, a vertical side surface of the sidewall dielectric is aligned with vertical side surfaces of the spin conductor layer and the first magnetic junction stack. A method including forming a first magnetic tunnel junction stack, a spin conductor layer and a second magnetic tunnel junction stack, patterning the second magnetic tunnel junction stack, while not patterning the spin conductor layer and the first magnetic tunnel junction stack, forming a sidewall dielectric and a polymer layer on the sidewall dielectric. A method including patterning a second magnetic tunnel junction stack, while not patterning a spin conductor layer below the second magnetic tunnel junction stack nor a first magnetic tunnel junction stack below the spin conductor layer.

Wide-base magnetic tunnel junction device with sidewall polymer spacer

A semiconductor device including a magnetic tunnel junction stack, a metallic hard mask aligned above the magnetic tunnel junction stack and an air gap surrounding the metallic hard mask. A method including forming a magnetic tunnel junction stack, forming a metallic hard mask aligned above the magnetic tunnel junction stack, conformally forming a dielectric over the metallic hard mask and the magnetic tunnel junction stack, forming barrier on vertical side surfaces of the dielectric, and removing the dielectric between the metallic hard mask and the barrier. A method including forming a magnetic tunnel junction stack, forming a metallic hard mask aligned above the magnetic tunnel junction stack, conformally forming a dielectric over the metallic hard mask and the magnetic tunnel junction stack, selectively removing a portion of the dielectric surrounding the metallic hard mark.

Magnetic tunnel junction device with air gap

A method of manufacturing and resultant device are directed to an inverted wide-base double magnetic tunnel junction device having both high-efficiency and high-retention arrays. The method includes a method of manufacturing, on a common stack, a high-efficiency array and a high-retention array for an inverted wide-base double magnetic tunnel junction device. The method comprises, for the high-efficiency array and the high-retention array, forming a first magnetic tunnel junction stack (MTJ2), forming a spin conducting layer on the MTJ2, and forming a second magnetic tunnel junction stack (MTJ1) on the spin conducting layer. The first magnetic tunnel junction stack for the high-retention array has a high-retention critical dimension (CD) (HRCD) that is larger than a high-efficiency CD (HECD) of the first magnetic tunnel junction stack for the high-efficiency array. The second magnetic tunnel junction stack (MTJ1) is shorted for the high-retention array and is not shorted for the high-efficiency array.

On-chip integration of a high-efficiency and a high-retention inverted wide-base double magnetic tunnel junction device

A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, forming a second magnetic tunnel junction stack on the spin conducting layer, and forming a dielectric spacer layer on surfaces of the spin conducting layer and the second magnetic tunnel junction stack. The second magnetic tunnel junction stack has a width that is less than a width of the first magnetic tunnel junction stack. Also, a width of the spin conducting layer increases in a thickness direction from a first side of the spin conducting layer adjacent to the second magnetic tunnel junction stack to a second side of the spin conducting layer adjacent to the first magnetic tunnel junction stack.

Double magnetic tunnel junction device

A memory element and methods of constructing the memory element are described. The memory element may include a bottom electrode structure having an uppermost portion of a first dimension. The memory element may further include a MTJ pillar having a bottommost portion forming an interface with the uppermost portion of the bottom electrode structure. The bottommost portion of the MTJ pillar may have a second dimension that is less than the first dimension. The memory element may further include oxidized metal particles located on an outermost sidewall of the MTJ pillar. The memory element may further include a top electrode structure located in the MTJ pillar.

MJT based anti-fuses with low programming voltage

A true random number generator (TRNG) device having a magnetic tunnel junction (MTJ) structure coupled to a domain wall wire. The MTJ structure is formed of a free layer (FL) and a reference layer (RL) that sandwiches a tunnel barrier layer. The free layer has anisotropy energy sufficiently low to provide stochastic fluctuation in the orientation of the magnetic state of the free layer via thermal energy. The domain wall wire is coupled to the MTJ structure. The domain wall wire has a domain wall. Movement of the domain wall tunes a probability distribution of the fluctuation in the orientation of the magnetic state of the free layer. The domain wall can be moved by application of a suitable current through the wire to tune the probability distribution of 1's and 0's generated by a readout circuit of the TRNG device.

Magnetic tunnel junction based true random number generator

A sub-micrometer pressure sensor is provided that includes a multilayered magnetic tunnel junction (MTJ) pillar that contains a non-magnetic metallic spacer separating a first magnetic free layer from a second magnetic free layer. The presence of the non-magnetic metallic spacer in the multilayered MTJ pillar improves the sensitivity without compromising area, and makes the pressure sensor binary (either 'on' or 'off') with little or no drift, and sensitivity change over time. Moreover, the resistivity switch in such a pressure sensor is instantly and a low error rate is observed.

Multilayered magnetic free layer structure in magnetic tunnel junction arrays for sub-micrometer resolution pressure sensors

A memory system in an integrated circuit and a method of operation. The system includes multiple magnetic tunnel junction (MTJ) structures, each MTJ structure storing a logic value according to a resistive state. A selection switch device associated with a respective MTJ structure is activated to select one of the multiple MTJ structures at a time. An output circuit is configured to sense the resistive state of a selected MTJ structure, the output circuit having a selectable input reference resistance value according to a selected first reference resistance or a second reference resistance value, and outputting a first logic value of the selected MTJ structure responsive to a resistive state of the MTJ structure and a selected first resistance reference value, or alternately outputting a second logic value of the selected MTJ structure responsive to the resistive state of the MTJ structure and a selected second resistance reference value.

Magnetic tunnel junction (MTJ) for multi-key encryption

A method for forming an inductor device. The method comprises forming a trench within a central core region of a conductive coil formed within a dielectric material. The method further comprises forming a composite region within the trench. The composite region including a polymer matrix having a plurality of particles with magnetic properties dispersed therein with the central core region to reduce eddy current loss and increase energy storage.

Method of manufacturing inductors in BEOL with particulate magnetic cores

A semiconductor structure and fabrication method of forming a semiconductor structure. The structure is a MRAM element having a first conductive electrode embedded in a first interconnect dielectric material layer upon which a multi-layered magnetic tunnel junction (MTJ) memory element is formed in a magnetoresistive random access memory (MRAM) device area. The first conductive electrode includes a first end having a top surface of a first surface area and a second end having a bottom surface of a second surface area, the first surface area being smaller than the second surface area. The second end of the bottom electrode includes a barrier liner material including a metal fill material, and the first end of the bottom electrode is a pillar structure formed as a result of an etchback process in which the metal barrier liner is recessed relative to the metal fill material.

Magnetic random access memory (MRAM) structure with small bottom electrode

A sub-micrometer pressure sensor including a multilayered magnetic tunnel junction (MTJ) pillar containing a magnetostrictive material layer above or below a magnetic free layer of the multilayered MTJ pillar is provided. Advanced patterning allows for scaling of the multilayered MTJ pillar down to 25 nm or below which enables the formation of a large array of extremely high resolution pressure sensors. By varying the thickness of the magnetostrictive material layer, the sensitivity of the pressure sensor can be fine tuned. Unique magnetostrictive materials in the multilayered MTJ pillar will alter the device current with the input of external pressure. Furthermore, unique arrays with much smaller critical elements can be organized in differential sensing arrangements of the multilayered MTJ pillar with pressure sensing capability that can outperform current piezoelectric based pressure sensing arrays.

Nanoscale magnetic tunnel junction arrays for sub-micrometer resolution pressure sensor

Fabricating a magnetoresistive random access memory (MRAM) device includes receiving a wafer structure having a first inter-layer dielectric (ILD) layer and a metal material disposed within the first ILD layer. A second ILD layer is deposited upon a top surface of the first ILD layer and the metal material. A trench is formed within the second ILD layer extending to the top surface of the metal material. A plurality of magnetic stack layers of a magnetic stack and an electrode layer are deposited within the trench. Portions of each of the magnetic stack layers of the magnetic stack and the electrode layer are removed to form a v-shaped magnetic tunnel junction (MTJ) in contact with the metal material.

Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profile

Techniques for MRAM patterning using a diamond-like carbon hardmask are provided. In one aspect, a method of forming an MRAM device includes: forming an MRAM stack on a substrate; depositing a metal hardmask layer on the MRAM stack; depositing a diamond-like carbon layer on the metal hardmask layer; forming a patterned resist on the diamond-like carbon layer; patterning the diamond-like carbon layer using the patterned resist to form a diamond-like carbon pillar; patterning the metal hardmask layer using the diamond-like carbon pillar to form a patterned metal hardmask; and patterning the MRAM stack into an MRAM pillar using the patterned metal hardmask to form the MRAM device. An MRAM device is also provided.

Diamond-like carbon hardmask for MRAM

A magnetic tunnel junction (MTJ) containing device and methods of constructing the MTJ containing device are described. In an example, the MTJ containing device may be a memory element including a bottom electrode structure, a MTJ pillar, and a top electrode structure located on the MTJ pillar. The MTJ pillar has a non-circular lateral cross section, where the MTJ pillar has a bottommost portion forming an interface with an uppermost portion of the bottom electrode structure. The MTJ pillar has a lateral perimeter-to-area ratio that defines a breakdown voltage of the MTJ pillar.

OTP elements with high aspect ratio MTJ

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Hopewell Junction, NY, United States of America

Chandrasekharan Kothandaraman