International Business Machines Corporation

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Siemens Aktiengesellschaft

Globalfoundries Inc.

Infineon Technologies Ag

Lockheed Martin Corporation

Infineon Technologies LLC

Chandrasekhar Narayan

Sampath Purushothaman

Carl John Radens

Timothy Joseph Dalton

Bruce Kenneth Furman

Raymond R Horton

Kevin Shawn Petrarca

Roy Rongqing Yu

Fuad Elias Doany

Jeffrey P Gambino

Toshiaki Kirihata

Jane M Shaw

Michael J Palmer

H Bernhard Pogge

Chandrika Prasad

Lawrence Alfred Clevenger

Evan G Colgan

Christopher Vincent Jahnes

Richard Paul Volant

Daniel Gruhl

Richard Anthony Conti

Nathaniel H Park

Shyng-Tsong Chen

Edward William Kiewra

Kaushik Arun Kumar

Alfredo Alba

Linda Ha Kato

Kei-Hsiung Yang

Steven R Welch

Chih-Chao Yang

Jack Allan Mandelman

James L Hedrick

Louis L Hsu

Daniel C Edelstein

Katherine Lynn Saenger

Michael Patrick Chudzik

Subramanian Srikanteswara Iyer

Sandra Guy Malhotra

Andrew Herbert Simon

Marie Angelopoulos

Laertis Economikos

Robert H Dennard

Lawrence Shungwei Mok

Conal Eugene Murray

Daniel Sanders

George Frederick Walker

Rajarao Jammy

David Lee Rath

Anna Wanda Topol

Thomas Mario Cipolla

Louis C Hsu

David M Dobuzinsky

Charles Thomas Black

Mahadevaiyer Krishnan

Rama Divakaruni

Leathen Shi

Michael F Lofaro

Nicholas C M Fuller

Joseph Francis Shepard, Jr

Chao-Kun Hu

David Andrew Lewis

Tien-Jen Cheng

Janusz S Wilczynski

Kelly Malone

Mark Hoinkis

Robert G Biskeborn

Claude Louis Bertin

William R Tonti

Dharmendra S Modha

Timothy Joseph Chainer

Matthew Earl Colburn

Chandrasekharan Kothandaraman

Elbert Emin Huang

Ravikumar Ramachandran

Louis Lu-Chen Hsu

Satyanarayana Venkata Nitta

Wayne Isami Imaino

Vincent James McGahay

Emanuel Israel Cooper

Jeffrey Curtis Hedrick

Michel Despont

Steven Lorenz Wright

Chun-Yung Sung

Philipp Herget

Sudipta Kumar Ray

Claudius Feger

Henning Haffner

Robert L Sandstrom

Pierre-Olivier Jubert

Sarah Huffsmith Knickerbocker

Michael Wayne Lane

Ian D Melville

Christy Sensenich Tyberg

Srinivasa S Reddy

John Campbell Scott

David Berman

Jeremy K Stephens

Peter VanderSalm Koeppe

Habib Hichri

Ali Afzali-ardakani

Candidate material for polymerization can be received. One or more desired features in the candidate material can be identified. A machine learning model can be trained to generate a new material having one or more of the desired features. Permissively, the candidate material can be determined from running a machine learning classification model that ranks a plurality of material as candidates. Permissively, the generated new material can be input to the machine learning classification model, for the machine learning classification model to include in ranking the plurality of material as candidates.

Expert-in-the-loop AI for materials generation

A set of material candidates expected to yield materials with target properties can be generated. A subject matter expert's decision indicating accepted and rejected material candidates from the set of material candidates can be received. Based on the subject matter expert's input, a machine learning model can be trained to replicate the subject matter expert's decision.

Expert-in-the-loop AI for materials discovery

A method for ranking relevance of documents includes using a set of queries, searching a corpus of documents for a set of candidate documents with information relevant to the set of queries. The method further includes ranking the set of candidate documents by a deep learning processing system according to relevance to respective ones of the set of queries. The method additionally includes responsive to user input, revising the ranked set of candidate documents to produce a revised ranked set of candidate documents. The method further includes using the revised ranked set of candidate documents to retrain the deep learning processing system. The method still further includes performing a categorization of the set of candidate documents by the retrained deep learning processing system.

Cognitive horizon surveillance

A first substrate, bonded to a second substrate by a material, is provided. The first substrate is transparent to at least some wavelengths of electromagnetic radiation. The first substrate is irradiated with the electromagnetic radiation to which the first substrate is transparent, such that the electromagnetic radiation impinges on the material causing a decomposition thereof at a location at an interface between the first substrate and the material. The decomposition results in, at the location, an interface of the first substrate and an atmosphere of the decomposition. The atmosphere of the decomposition has an optical property resulting in ceasing the decomposition of the material.

Damage-free self-limiting through-substrate laser ablation

Embodiments of the present invention provide a method of forming carbon nanotube based semiconductor devices. The method includes creating a guiding structure in a substrate for forming a device; dispersing a plurality of carbon nanotubes inside the guiding structure, the plurality of carbon nanotubes having an orientation determined by the guiding structure; fixating the plurality of carbon nanotubes to the guiding structure; and forming one or more contacts to the device. Structure of the formed carbon nanotube device is also provided.

Carbon nanotube device

The present invention provides a reprogrammable electrically blowable fuse and associated design structure. The electrically blowable fuse is programmed using an electro-migration effect and is reprogrammed using a reverse electro-migration effect. The state (i.e., 'opened' or 'closed') of the electrically blowable fuse is determined by a sensing system which compares a resistance of the electrically blowable fuse to a reference resistance.

Reprogrammable electrical fuse

Disclosed is a synaptic element that uses electro-migration in an interconnect structure, wherein the interconnect structure is optimized to give control of resistivity change following current flow. The synaptic element exhibits resistivity that is a function of the amount (of charge) and direction of current flow, wherein a continuously variable resistance is obtained by controlling the volume of a designed void in the interconnect structure.

Structure and method for integrated synaptic element

An electronic synapse device is provided. One embodiment of the invention includes a metastable switching synaptic device. Changing conductance of the metastable switching synaptic device occurs by receiving opposite signed first and second voltage pulses at the metastable switching synaptic device where magnitude of the first voltage pulse and the second voltage pulse each are below a switching voltage magnitude threshold. A magnitude difference between the first voltage pulse and the second voltage pulse exceeds the switching voltage magnitude threshold by an amount, wherein the amount is a function of a relative timing between the first voltage pulse and the second voltage pulse.

Electronic synapse

In one embodiment, a read sensor for a recording head for a magnetic media storage system, has first and second shields, and a magneto-resistive sensor disposed between and shielded by the first and second shields in which the sensing axis of the sensor is tilted with respect to the recording surface of the head. In one embodiment, the sensing axis is oriented at an angle between 10 and 60 degrees with respect to the normal of the recording surface. Other embodiments are described and claimed.

Recording head with tilted orientation

An opto-thermal annealing mask stack layer includes a thermal dissipative layer located over a substrate. A reflective layer is located upon the thermal dissipative layer. A transparent capping layer, that may have a thickness from about 10 to about 100 angstroms, is located upon the reflective layer. The opto-thermal annealing mask layer may be used as a gate electrode within a field effect device.

Opto-thermal mask including aligned thermal dissipative layer, reflective layer and transparent capping layer

A metallized feature is formed in the top surface of a substrate, and a handling plate is attached to the substrate. The substrate is then thinned at the bottom surface thereof to expose the bottom of the feature, to form a conducting through-via. The substrate may comprise a chip having a device (e.g. DRAM) fabricated therein. The process therefore permits vertical integration with a second chip (e.g. a PE chip). The plate may be a wafer attached to the substrate using a vertical stud/via interconnection. The substrate and plate may each have devices fabricated therein, so that the process provides vertical wafer-level integration of the devices.

Chip and wafer integration process using vertical connections

An integrated circuit (IC) chip, semiconductor wafer with IC chips in a number of die locations and a method of making the IC chips on the wafer. The IC chips have plated chip interconnect pads. Each plated pad includes a noble metal plated layer electroplated to a platable metal layer. The platable metal layer may be copper and the noble metal plated layer may be of gold, platinum, palladium, rhodium, ruthenium, osmium, iridium or indium.

Seedless wirebond pad plating

A method in effectuating the redirection of light which is propagated within a waveguide, and which eliminates the necessity for a bending of the waveguide, or the drawbacks encountered in directional changes in propagated light involving the need for sharp curves of essentially small-sized radii, which would resultingly lead to excessive losses in light. In this connection, the method relates to the fabricating and the provision of a wire-grid polarization beam splitter within an optical waveguide, which utilizes a diblock copolymer template to formulate the wire-grid.

Waveguide polarization beam splitters and method of fabricating a waveguide wire-grid polarization beam splitter

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Hopewell Junction, NY, United States of America

Chandrasekhar Narayan