Applied Materials, Inc.

University of California

Other

Applied Komatsu Technology, Inc.

The Regents of the Univ. of Calif.

Chandra V Deshpandey

John F Cameron

Shamouil Shamouilian

Richard Ernest Demaray

Manoocher Birang

Manuel J Herrera

Ron Northrup

David F Eline

Sasson Roger Somekh

Yuh-Jia (Jim) Su

Rointan F Bunshah

Joseph F Salfelder

Alfred Goldspeil

Semyon Shertinsky

Tony P Chiang

Vijay D Parkhe

Dennis Stanley Grimard

Semyon Sherstinsky

Peter Reimer

Michael G Chafin

Hans J Doerr

Robert E Ryan

Hong P Gao

Marc David Shull

Alfred Abraham Goldspiel

Jane P Chang

Rajiv Gopal Pethe

Vasant D Vankar

Trinh Tu Van

Karl Lesser

Aziz A Karim

Jong S Yoon

Sasson Someth

Kasturi L Chopra

Roitan F Bunshah

Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.

Microstructure control of conducting materials through surface coating of powders

The invention relates to methods for producing doped thin layers on substrates comprising the steps of depositing a dopant precursor on the substrate via an atomic layer deposition technique; and exposing the deposited dopant precursor to radicals. The methods can further comprise depositing a compound adjacent the dopant metal via an atomic layer deposition technique; and exposing the deposited compound to radicals, thereby providing a host. The invention relates to articles comprising approximately atomically thin layers of metals or metal oxides doped with at least one different metal or metal oxide. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Controlled nano-doping of ultra thin films

In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatus is a three dimensional structure having a specifically defined range of electrical, chemical, mechanical and thermal properties enabling the structure to function adequately as an insulator which does not break down at voltages ranging between about 1,500 V and about 3,000 V, which provides a seal against a vacuum of at least about 10 Torr, and which can function at a continuous operating temperature of about 300&deg; F. (148.9&deg; C.) or greater. The insulating sealing structure may be fabricated solely from particular polymeric materials or may comprise a center reinforcing member having at least one layer applied to its exterior surface, where the at least one surface layer provides at least a portion of the insulating properties and provides the surface finish necessary to make an adequate seal with a mating surface. A first preferred embodiment comprises an aluminum center reinforcing member having at least one layer of a polymeric insulator applied to provide an insulating, sealing surface. A second preferred embodiment comprises an anodized aluminum center reinforcing member having an inorganic insulator such as silicon oxide, silicon nitride, or aluminum nitride applied to provide the insulating, sealing surface. A third preferred embodiment comprises a graphite, silica or glass fiber-reinforced member having at least one layer of a polymeric insulator applied thereover, to provide an insulating sealing surface. A fourth preferred embodiment comprises a silicon nitride or graphic fiber-reinforced member having an inorganic, non-metallic insulating sealing surface thereover.

Method of forming an electrically insulating sealing structure for use in a semiconductor manufacturing apparatus

A method of fabricating an electrostatic member for holding a substrate in a process chamber containing erosive process gas. The method comprises the steps of forming an electrostatic member comprising an insulator or dielectric layer covering an electrically conductive layer, and shaping the electrostatic member to form a dielectric covered electrode and an electrical connector attached to the dielectric covered electrode to conduct charge to the dielectric covered electrode

Method of fabricating an electrostatic chuck

Apparatus for retaining a workpiece in a semiconductor processing chamber and method for fabricating the same. In one embodiment, a method for fabricating the apparatus includes providing a controlled resistivity boron nitride (CRBN) plate. A conductive layer is disposed on a portion of a lower surface of the CRBN plate to form at least one chucking electrode. A layer of boron nitride powder is disposed on the conductive layer and the lower surface of the CRBN plate. The CRBN plate, the conductive layer, and the boron nitride powder are hot pressed together to form the apparatus. In a second embodiment, a conductive electrode layer is deposited on a portion of a lower surface of the CRBN plate. A layer of pyrolytic boron nitride is deposited on the conductive layer and the lower surface of the CRBN plate to form the apparatus.

Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same

In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatus is a three dimensional structure having a specifically defined range of electrical, chemical, mechanical and thermal properties enabling the structure to function adequately as an insulator which does not break down at voltages ranging between about 1,500 V and about 3,000 V, which provides a seal against a vacuum of at least about 10 Torr, and which can function at a continuous operating temperature of about 300&deg; F. (148.9&deg; C.) or greater. The insulating sealing structure may be fabricated solely from particular polymeric materials or may comprise a center reinforcing member having at least one layer applied to its exterior surface, where the at least one surface layer provides at least a portion of the insulating properties and provides the surface finish necessary to make an adequate seal with a mating surface.

Electrically insulating sealing structure and its method of use in a semiconductor manufacturing apparatus

Thin semiconductor films or layers having a pre-selected degree of crystallinity, from amorphous material to poly-crystalline material, can be obtained by selecting an appropriate aspect ratio for a collimator used during a sputtering process. The orientation of the deposited film also can be tailored by selection of the collimator aspect ratio. Sputtered collimation permits highly crystalline films to be formed at temperatures significantly below the annealing temperature of the sputtered material. Thus, required fabrication steps and increase the throughput of the use of low temperatures allows films of substantially greater crystallinity and carrier mobility to be fabricated on glass and other low temperature substrates. Additionally, thin semiconductor Trapped charge defects also can be reduced by grounding the collimator to provide electrical isolation between the charged plasma particles and the substrate on which the sputtered layer is to be formed. Dielectric films having a thickness as small as several hundred &angst; can be formed to fabricate high transconductance devices with high breakdown strengths. improved electrically active interfaces, such as a rectifying junction between a semiconductor layer and a dielectric layer or an ohmic junction between intrinsic and doped semiconductor materials.

Collimated sputtering of semiconductor and other films

In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatus is a three dimensional structure having a specifically defined range of electrical, chemical, mechanical and thermal properties enabling the structure to function adequately as an insulator which does not break down at voltages ranging between about 1,500 V and about 3,000 V, which provides a seal against a vacuum of at least about 10.sup.-6 Torr, and which can function at a continuous operating temperature of about 300.degree. F. (148.9.degree. C.) or greater. The insulating sealing structure may be fabricated solely from particular polymeric materials or may comprise a center reinforcing member having at least one layer applied to its exterior surface, where the at least one surface layer provides at least a portion of the insulating properties and provides the surface finish necessary to make an adequate seal with a mating surface. A first preferred embodiment comprises an aluminum center reinforcing member having at least one layer of a polymeric insulator applied to provide an insulating, sealing surface. A second preferred embodiment comprises an anodized aluminum center reinforcing member having an inorganic insulator such as silicon oxide, silicon nitride, or aluminum nitride applied to provide the insulating, sealing surface. A third preferred embodiment comprises a graphite, silica or glass fiber-reinforced member having at least one layer of a polymeric insulator applied thereover, to provide an insulating sealing surface. A fourth preferred embodiment comprises a silicon nitride or graphic fiber-reinforced member having an inorganic, non-metallic insulating sealing surface thereover.

Electrically insulating sealing structure and its method of use in a

An electrostatic chuck (20) for holding a substrate (45) is described. One version of the chuck (20) suitable for mounting on a base (25), comprises (i) an electrostatic member (33) having an electrode (50) therein, and (ii) an electrical lead (60) extending through the base (25) to electrically engage the electrode (50) of the electrostatic member (33). When the chuck (20) is used to hold a substrate (45) in a process chamber (80) containing erosive process gas, the substrate (45) covers and substantially protects the electrical lead (60) from erosion by the erosive process gas. In a preferred version of the chuck (20), an electrical connector (55) forming an integral extension of the electrode (50), electrically connects the electrode (50) to a voltage supply terminal (70) used to operate the chuck (20). The electrical connector (55) comprises (i) an electrical lead (60) that extends through the base (25), and (ii) an electrical contact (65) on the electrical lead (60), the contact sized sufficiently large to directly contact and electrically engage the voltage supply terminal (70). The electrode (50) of the chuck (20) can comprise first and second electrodes (130), (135) electrically isolated from one another by an electrical isolation void (52), the electrodes sized and configured so that the electrical isolation void (52) can serve as a cooling groove (105) for holding coolant for cooling the substrate (45) held on the chuck (20). Preferably, the two electrode chuck (20) is used in conjunction with a switching system capable of operating the chuck (20) in either a monopolar mode or in a bipolar mode.

Electrostatic chuck with improved erosion resistance

A method of forming an electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 is described. The method comprises the steps of forming a base 22 for supporting a substrate 42. An insulator 26 with an electrode 24 therein, is formed on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is formed either (i) on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.

Method of forming an electrostatic chuck suitable for magnetic flux

An electrostatic chuck (20) for holding a substrate (45) is described. One version of the chuck (20) suitable for mounting on a base (25), comprises (i) an electrostatic member (33) having an electrode (50) therein, and (ii) an electrical lead (60) extending through the base (25) to electrically engage the electrode (50) of the electrostatic member (33). When the chuck (20) is used to hold a substrate (45) in a process chamber (80) containing erosive process gas, the substrate (45) covers and substantially protects the electrical lead (60) from erosion by the erosive process gas. In a preferred version of the chuck (20), an electrical connector (55) forming an integral extension of the electrode (50), electrically connects the electrode (50) to a voltage supply terminal (70) used to operate the chuck (20). The electrical connector (55) comprises (i) an electrical lead (60) that extends through the base (25), and (ii) an electrical contact (65) on the electrical lead (60), the contact sized sufficiently large to directly contact and electrically engage the voltage supply terminal (70). The electrode (50) of the chuck (20) can comprise first and second electrodes (130), (135) electrically isolated from one another by an electrical isolation void (52), the electrodes sized and configured so that the electrical isolation void (52) can serve as a cooling groove (105) for holding coolant for cooling the substrate (45) held on the chuck (20). Preferably, the two electrode chuck (20) is used in conjunction with a switching system capable of operating the chuck (20) in either a monopolar mode or in a bipolar mode. Erosion resistance of the chuck (20) is further enhanced by a masking gas assembly (115) which directs a masking gas at an exposed portion of the insulator (35), to protect the exposed portion of the insulator (35) from the erosive gas contained in the process chamber (80).

An erosion resistant electrostatic chuck 20 for holding a substrate 45 having a peripheral edge 50, in an erosive environment, comprises an electrostatic member 25 including (i) an electrode 30, and (ii) an insulator 35 covering the electrode. A barrier 55 is circumferentially disposed about the electrostatic member 25. The barrier 55 comprises a first contact surface 60 capable of being pressed against the peripheral edge 50 of the substrate 45 to form a seal around the substrate 45 to reduce exposure of the electrostatic member 25 of the chuck 20 to the erosive environment.

Barrier seal for electrostatic chuck

An electrostatic chuck (20) for holding a substrate (40) in a process chamber (50) comprises a base (25) supporting a resilient insulator (30). The insulator (30) comprises (i) an electrode (35) embedded therein; (ii) a top surface (34) with a peripheral edge (32); and (iii) cooling grooves (45) for holding coolant in the top surface (34), the tips (125) of the cooling grooves (45) and the peripheral edge (32) of the insulator (30) defining an edge gap (130) having a width w. The width w of the edge gap (130) is sized sufficiently small that the coolant in the grooves (45) cools the perimeter (120) of the substrate (40) held on the chuck (20). The insulator (30) is sufficiently thick that when a substrate (40) is electrostatically held on the chuck (20) and coolant is held in the cooling grooves (45), the insulator (30) in the edge gap (130) resiliently conforms to the substrate (40) so that substantially no coolant leaks out from the tips (125) of the cooling grooves (45). Preferably, the coolant grooves (45) do not cut into the electrode (35).

Erosion resistant electrostatic chuck with improved cooling system

An electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 comprises a base 22 having an upper surface adapted to support a substrate 42 thereon. An insulator 26 with an electrode 24 therein, is on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is positioned (i) either on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.

Electrostatic chuck for magnetic flux processing

A process for depositing metal oxides by activated reactive evaporation (ARE) wherein deposition rate and film quality is controlled by reference to the relative amounts of metal and metal oxide present on the surface of the target material. The ratio of metal surface area to metal oxide surface area required to obtain high deposition rates is achieved by maintaining a relatively high concentration of oxygen in the reaction zone. This relative ratio of metal surface area to metal oxide surface area on target material provides a continuous indirect measure of film deposition rate and quality during the ARE process.

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Los Angeles, CA, United States of America

Chandra V Deshpandey