Chandra Tiwari

Kunal Shrotri

Swapnil Lengade

Yi Hu

Tom Jibu John

Wei Yeeng Ng

Xiaosong Zhang

Ramey M Abdelrahaman

Jeslin J Wu

Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.

Integrated assemblies and methods of forming integrated assemblies

In some embodiments, a memory array comprising strings of memory cells comprise laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The pillars comprise vertically-spaced and radially-projecting insulative rings in the conductive tiers as compared to the insulative tiers. Other embodiments, including methods, are disclosed.

Memory arrays and methods used in forming a memory array comprising strings of memory cells

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Boise, ID, United States of America

Chandra Tiwari