Applied Materials, Inc.

Chandan Kr Barik

John Leonard Sudijono

Bhaskar Jyoti Bhuyan

Mark Joseph Saly

Feng Quan Liu

Doreen Wei Ying Yong

Chandan Das

Michael G Haverty

Cong Trinh

Muthukumar Kaliappan

Yingqian Chen

Richard Ming Wah Wong

Anil Kumar Tummanapelli

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum(0) precursors for deposition of molybdenum films

Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SiN) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SiN) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

Chalcogen precursors for deposition of silicon nitride

Growing community of inventors

Singapore, Singapore

Chandan Kr Barik