Lg Chem, Ltd

Lg Energy Solution, Ltd.

Chan Yeup Chung

Jung Min Ko

Ho Rim Lee

Da Young Sung

Dae Sung Kim

Manshik Park

Chang Sun Eun

Sung Soo Lee

Doo Kyung Yang

Cheol-Hee Park

Sung-Ho Chun

Ji Hye Kim

Jae Hyun Kim

Junghwan Kim

Min Chul Jang

Shin Hee Jun

Han Nah Jeong

Chee-Sung Park

Jong Hyun Chae

Kyoung Hoon Kim

Sang Yun Jung

Eun Kyung Park

Tae Seob Lee

Su Hwan Kim

Jung Ha Park

Chang Hun Park

A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga):SiM1M2M3&#x2003;&#x2003;Formula 1

Silicon-based molten composition and method for manufacturing silicon carbide single crystal using the same

A film-shaped coating layer including at least one lithium ion conductive compound having a band gap of 5.5 eV to 10 eV formed on the surface of a core including a lithium composite metal oxide to a thickness at which dielectric breakdown does not occur according to types of the lithium ion conductive compound and the lithium composite metal oxide under charge and discharge conditions. Thereby, an oxidation/reduction reaction is suppressed by blocking the movement of electrons at an interface between an active material and an electrolyte solution by the coating layer which surrounds the surface of particles and has lithium ion conductivity, and, as a result, a positive electrode active material for a secondary battery, which may improve energy density of an electrode and life characteristics of a battery, and a secondary battery including the same are provided.

Cathode active material for secondary battery and secondary battery comprising same

The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al):SiM1ScAl&#x2003;&#x2003;(Formula 1)

Silicon based fusion composition and manufacturing method of silicon carbide single crystal using the same

A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al).SiCrVAl&#x2003;&#x2003;[Formula 1]In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

The present invention relates to a solid electrolyte comprising a sulfide-based compound and an all-solid-state battery applied therewith and, more particularly, to a solid electrolyte comprising a sulfide-based compound that is free of phosphorus (P) element but exhibits high ionic conductivity, and an all-solid-state battery applied therewith. The sulfide-based solid electrolyte and the all-solid-state battery applied therewith according to the present invention exhibit improved reactivity to moisture to prevent the generation of toxic gas, resulting in an improvement in safety and stability and do not reduce in ion conductivity even after being left in air, and the solid electrolyte is easy to handle and store thanks to the improved shelf stability thereof.

Sulfide-based solid electrolyte and all-solid-state battery applied therewith

Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (C) defined by Equation (1) below is less than &#x2212;0.37, wherein a SiC single crystal is formed by a solution method:&#x2212;&#x3bc;&#x2003;&#x2003;Equation (1)in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, &#x3bc;1 is a constant of &#x2212;5.422, and &#x3bc;2 is a constant of &#x2212;9.097.

Silicon-based molten composition and manufacturing method of SiC single crystal using the same

The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70&#x2264;Csisol&#x2264;1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1):Csisol=+&#x3bc;1&#x2212;&#x3bc;2&#x2003;&#x2003;Equation (1)

The present invention relates to a method for preparing a perovskite compound usable as a light absorber of a solar cell, and provides a method for preparing a light absorber of a solar cell in which the crystallinity of a perovskite compound is increased, resulting in an increase in the stability and efficiency of the solar cell.

Method for preparing light absorber of solar cell

The present invention relates to a composition for forming a conductive pattern, which is able to form a fine conductive pattern onto a variety of polymer resin products or resin layers by a very simple process, a method for forming the conductive pattern using the same, and a resin structure having the conductive pattern. The composition for forming the conductive pattern, including a polymer resin; and a non-conductive metal compound containing a first metal and a second metal, in which the non-conductive metal compound has a three-dimensional structure containing a plurality of first layers that contains at least one metal of the first and second metals and has edge-shared octahedrons two-dimensionally connected to each other, and a second layer that contains a metal different from that of the first layer and is arranged between the neighboring first layers; and a metal core containing the first or second metal or an ion thereof is formed from the non-conductive metal compound by electromagnetic irradiation.

Growing community of inventors

Daejeon, South Korea

Chan Yeup Chung