Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Chan Woo Yang

Dong Min Lee

Su Kyoung Yang

Hyun Eok Shin

June Whan Choi

Bo Sung Kim

Seung-Ho Jung

Doo Hyoung Lee

Joon Yong Park

Ju Hyun Lee

Chang Oh Jeong

Hyune Ok Shin

Tae-Young Choi

Hong Sick Park

Kap Soo Yoon

Gyung Min Baek

Sang Won Shin

Doo Na Kim

Yeon Taek Jeong

Eun Hye Park

Gwang Min Cha

An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

Organic light emitting diode display device and manufacturing method of an organic light emitting diode display device

A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 &#x212b; or more to 144 &#x212b; or less.

Thin film transistor substrate

Organic light emitting diode display device and manufacturing method thereof

A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive layer and a metal oxide layer stacked on the conductive layer, wherein the metal oxide layer comprises molybdenum (Mo), tantalum (Ta), and oxygen (O). The conductive layer includes a first metal layer on the first base, and a second metal layer between the first metal layer and the metal oxide layer. The second metal layer has a higher electrical conductivity than the first metal layer, and a thickness of the second metal layer is greater than a thickness of the first metal layer.

Wire substrate and display device including the same

A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 &#x212b; or more to 144 &#x212b; or less.

A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoTaO, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.

Wire substrate, display device including the same, and method of fabricating wire substrate

A display device includes a reflective layer on a first electrode, the reflective layer including silver or a silver alloy, an inorganic layer on the reflective layer, the inorganic layer having a work function that is lower than that of the reflective layer, an emission layer on the inorganic layer, an organic layer on the emission layer, and a second electrode on the organic layer.

Display device

A thin-film transistor array panel includes a gate line disposed on a first substrate, the gate line including a gate electrode, a semiconductor layer disposed on the first substrate, the semiconductor layer including an oxide semiconductor, a data wire layer disposed on the first substrate, the data wire layer including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a capping layer disposed on the data wire layer, a tilt layer disposed on the capping layer, and a passivation layer disposed on the tilt layer, in which the tilt layer includes a silsesquioxane-based copolymer.

Thin film transistor array panel, liquid crystal display and manufacturing method thereof

A display device and a method of manufacturing the display device are provided. According to an exemplary embodiment, a display device includes: a substrate; a gate electrode disposed on the substrate; a semiconductor pattern disposed on the gate electrode; data wiring disposed on the semiconductor pattern and having a data line, a source electrode, and a drain electrode; a first barrier layer disposed between the data wiring and the semiconductor pattern; and undercuts disposed on at least one side of each segment of the first barrier layer.

Display device and manufacturing method thereof

An organic light-emitting diode (OLED) display device includes a substrate; a transistor device disposed on the substrate; a first electrode electrically connected to the transistor device; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. The OLED display device further includes a transflective layer contacting a lower surface of the first electrode and having a relatively higher refractive index than the first electrode.

OLED display device including transflective layer and method of manufacturing the same

A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.

Thin film transistor and method of forming the same

A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Precursor composition of oxide semiconductor and thin film transistor substrate including oxide semiconductor

A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Growing community of inventors

Siheung-si, South Korea

Chan Woo Yang