Lam Research Corporation

Chan Myae Myae Soe

Adrien Lavoie

Pulkit Agarwal

Bart Jan Van Schravendijk

Chloe Baldasseroni

Shiva Sharan Bhandari

Ramesh Chandrasekharan

Ravi Kumar

Michael Philip Roberts

Ashish Saurabh

Nuoya Yang

Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.

Modulated atomic layer deposition

A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values. The solving module, subsequent to the calibration of the temperature control elements, controls operation of the temperature control elements during at least one of a trim or deposition step based on the operating parameters.

Trim and deposition profile control with multi-zone heated substrate support for multi-patterning processes

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Santa Clara, CA, United States of America

Chan Myae Myae Soe