Samsung Electronics Co., Ltd.

Skhynix Inc.

Chan Mook Lim

Jong Ho Lee

Jin Hwan Kim

Su Hyun Jo

Jin Hyun Lee

Hyuk Jae Chang

Ki Seok Kim

Young Chul Shin

Bong Hoon Lee

Hye Lyoung Lee

Tae Hun Kim

Sung Tae Kim

Su Yeol Lee

Sang Yeob Song

Bum Joon Kim

Min Kyu Jeong

Sang Seok Lee

Seung Wan Chae

Mi Jeong Yun

Hea Jong Yang

Myeong Ha Kim

Hae Yeon Hwang

Masaaki Sofue

Tae Kang Kim

Gae Hun Lee

Yong Jun Kim

Provided herein may be a semiconductor memory device and a method of operating the same. The semiconductor memory device may include peripheral circuits configured to perform a verify operation on selected memory cells by applying a verify voltage to a word line, and perform a compensation program operation on the selected memory cells by applying a compensation program voltage to the word line; and a control logic configured to control the peripheral circuits such that the compensation program operation is performed by applying the compensation program voltage to the selected memory cells to be programmed to a selected threshold voltage distribution among the threshold voltage distributions other than a highest threshold voltage distribution, wherein the compensation program voltage has a positive voltage lower than the main program voltage most recently applied to the word line.

Semiconductor memory device and method of operating the same

A semiconductor device includes a memory string coupled between a common source line and a bit line, the memory string including at least one first selection transistor, a plurality of memory cells, and a plurality of second selection transistors. The semiconductor device also includes selection lines respectively coupled to the second selection transistors. The semiconductor device further includes a control logic circuit configured to float a first group of selection lines from among the selection lines at a first time and configured to float a second group of selection lines from among the selection lines at a second time different from the first time.

Semiconductor device and operating method of a semiconductor device

Provided herein may be a semiconductor memory device and a method of operating the same. The semiconductor memory device may include a plurality of pages each including a plurality of memory cells, peripheral circuits configured to perform a program operation of a selected page among the plurality of pages and a control logic configured to control the peripheral circuits such that a main program operation is performed on the selected page and, when the main program operation is completed, a compensation program operation is performed on memory cells having lower threshold voltage retention characteristics compared to remaining memory cells, among the memory cells included in the selected page.

A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode

A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.

Semiconductor light-emitting device

A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction. The second electrode may include a transparent electrode part positioned on the second conductivity type semiconductor layer and including at least one opening therein, at least one reflective part spaced apart from the transparent electrode part within the opening and disposed in the pad region and the finger region, and a bonding part positioned on at least one portion of the reflective part and including a plurality of bonding finger parts spaced apart from each other in the finger region and a bonding pad part disposed in the pad region.

Semiconductor light emitting device and method of manufacturing the same

A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.

Semiconductor light emitting device

A method of manufacturing a semiconductor light emitting device having a multi-cell array, including: sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; etching and removing portions of the second conductive semiconductor layer and the active layer so as to expose portions of an upper surface of the first conductive semiconductor layer corresponding to respective regions of the second conductive semiconductor layer spaced apart from one another; and separating light emitting cells by partially etching the exposed portions of the first conductive semiconductor layer, wherein the separating of the light emitting cells is not performed at an edge portion of the substrate.

Semiconductor light emitting device having multi-cell array and method of manufacturing the same

A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.

Semiconductor light emitting device, light emitting module, and illumination apparatus

A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.

Semiconductor light emitting device having multi-cell array

Light emitting devices. A light emitting device including a power source; and a plurality of light emitting diode (LED) arrays coupled to the power source unit; and at least one delay unit. Each delay unit is coupled to a corresponding light emitting diode array of the light emitting diode arrays.

Light emitting device

A semiconductor light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes first and second conductive semiconductor layers having an active layer formed therebetween, and first and second electrodes formed on the first and second layers. A first insulation layer is formed on portions of the light emitting cell, while a second insulation layer entirely covers at least one light emitting cell. A method of manufacturing the semiconductor light emitting device, and a light emitting module and an illumination apparatus including the semiconductor light emitting device are also provided.

Semiconductor light emitting device having multi-cell array and manufacturing method thereof, light emitting module, and illumination apparatus

A proton exchange membrane fuel cell and a direct methanol fuel cell pack using a monopolar electrode are provided. The fuel cell pack includes a plurality of cells each having a membrane in its middle and a cathode and an anode at both sides of the membrane, collector plates contacting the cathode and the anode, respectively, in each cell, and an electrical connection member for electrically connecting adjacent cells. The cells are evenly disposed on an arbitrary plane with a hollow interposed between two adjacent cells. The electrical connection member is positioned in the hollow. The fuel cell pack also includes a porous fuel diffusion member contacting the anode of each cell; a porous air contact member contacting the cathode of each cell; an anode end plate and a cathode end plate disposed at the side of the anodes of the cells and at the side of the cathodes of the cells, respectively, for protecting the cells; a fuel supply and discharge unit for supplying fuel toward the anodes in the hollow and discharging the fuel; a fuel flow stopper disposed at a portion at the part of the cathodes in the hollow, for preventing fuel flowing at a portion at the part of the anodes in the hollow from flowing toward the portion at the part of the cathodes in the hollow; and a sealing member for sealing the anodes of the cells and the portion of the hollow corresponding to the anodes. Accordingly, circulation of fuel for the plurality of cells is performed through a single inlet and a single outlet so that a fuel supply line is very simple compared to a structure of a fuel supply line for each cell in a conventional cell pack having a structural limitation. In addition, the cell pack generates current of a high density without a separate cooling device.

Monopolar cell pack of proton exchange membrane fuel cell and direct methanol fuel cell

A method for preparing a slurry for forming a catalyst layer of a PEM fuel cell electrode and a method for fabricating the PEM fuel cell produced thereby are provided. The method for preparing a slurry for forming a catalyst layer of a proton exchange membrane (PEM) fuel cell according to the present invention comprises the steps of (a) adding an MOH solution to a perfluorosulfonate ionomer (PFSI) solution to convert PFSI in the PFSI solution into an M form-PFSI solution, wherein M is an alkaline metal selected from the group consisting of Li, Na and K; (b) adding an organic polar solvent having a higher boiling point than that of alcohol remaining in the PFSI solution to a mixed solution obtained in step (a) and heating the mixture at a temperature range of the boiling point of the alcohol to 20&deg; C. higher than the boiling point to remove the remaining alcohol to obtain a pretreated PFSI solution; and (c) mixing the pretreated PFSI solution with Pt/C to form a slurry for forming a catalyst layer of a PEM fuel cell. Since processing stability is improved and the slurry can be easily prepared, Pt loading greater than a conventional level can be achieved by a single coating step by preventing a Pt catalyst from penetrating into a backing layer, the electrode characteristics are improved. Also, mass production of the PEM fuel cells is possible.

Growing community of inventors

Suwon-si, South Korea

Chan Mook Lim