Siemens Corporate Research, Inc.

Siemens Corporate Research & Support, Inc.

Chan-Long Shieh

Reinhard W Engelmann

Joseph L Mantz

Joseph I Mantz

Reinhart W Engelmann

A method of altering a refractive index, as for an optical waveguide, as in a buried heterostructure laser, by inducing disordering in a region of a semiconductor body comprises exposing a surface portion of the semiconductor body to plasma etching, coating at least a part of the surface portion with an oxide layer, heat treating the semiconductor body.

Method for fabricating index-guided semiconductor laser

A method of altering a refractive index, as for an optical waveguide, as in a buried heterostructure laser, by inducing disordering in a region of a semiconducotr body comprises exposing a surface portion of the semiconductor body to plasma etching, coating at least a part of the surface portion with an oxide layer, heat treating the semiconductor body.

A process of making an integrated injection logic (I.sup.2 L) semiconductor structure is disclosed which is particularly advantageous for implementation in a group III-V compound semiconductor such as gallium arsenide. By use of 'regrowth' techniques, the base region of the lateral transistor is made extremely thin (less than one-tenth micron). Utilization of a Schottky collector in a vertical transistor simplifies the structure.

Method of making I.sup.2 L heterostructure bipolar transistors

An integrated injection logic (I.sup.2 L) semiconductor structure is disclosed which may be advantageously implemented in a group III-V compound semiconductor such as gallium arsenide. The base region of the lateral transistor is made extremely thin (less than one-tenth micron) by use of 'regrowth' techniques. The structure of the vertical transistor is simplified by using a Schottky collector.

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Plainsboro, NJ, United States of America

Chan-Long Shieh