United Microelectronics Corp.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Lam Research Corporation

United Microelectronics Corps.

Chan-Lon Yang

Chansyun David Yang

Keh-Jeng Chang

Tong-Yu Chen

Ming-Hua Yu

Chin-Cheng Chien

Perng-Fei Yuh

Chih-Ning Wu

Shao-Hua Hsu

Chien-Ting Lin

Chun-Hsien Lin

Chun-Yuan Wu

Chiu-Hsien Yeh

Shin-Chi Chen

Po-Jui Liao

Tsung-Lung Tsai

Yeng-Peng Wang

Chih-Han Lin

Tze-Liang Lee

Tsz-Mei Kwok

Chung-Cheng Wu

Jiunn-Hsiung Liao

Kun-Mu Li

Shu-Yen Chan

Gwan-Sin Chang

Che-Yu Lin

Tetsuji Ueno

Kuo-An Liu

Guang-Yaw Hwang

Hung-Ling Shih

Zhi-Qiang Wu

Bharath Kumar Pulicherla

Yee-Chia Yeo

Yen-Ming Chen

Chih-Hsin Ko

Chih Chieh Yeh

Cheng-Hsien Wu

Liang-Yin Chen

Xiong-Fei Yu

Chin-I Liao

Chia-Wen Liang

Ching-I Li

Ted Ming-Lang Guo

Tsu-An Lin

Syun-Ming Jang Jang

Teng-Chun Tsai

Chao-Cheng Chen

Pinyen Lin

Ming-Ching Chang

Li-Te S Lin

Shih-Fang Tzou

Kuei-Yu Kao

Hsin-Fu Huang

Zhi-Cheng Lee

Che-Hua Hsu

Min-Chuan Tsai

Cheng-Guo Chen

Chun-Yao Yang

Ger-Pin Lin

Michael W C Huang

Keh-Ching Huang

Lien-Fa Hung

Yun-Cheng Kao

Yi-Wei Chen

Tri-Rung Yew

Chin-Fu Lin

Sun-Chieh Chien

Chi-Mao Hsu

Chia-Lin Hsu

Tzyy-Ming Cheng

Shui-Yen Lu

Pei-Yu Chou

Chien-Liang Lin

Po-Cheng Huang

Yi-Wen Chen

Jui-Tsen Huang

Cheng-Yuan Tsai

Wei-Hsin Liu

Ying-Wei Yen

Jie-Ning Yang

Wen-Yi Teng

Tzung-Ying Lee

Sung-Hsiung Wang

Shang-Yuan Tsai

Bor-Shyang Liao

Chang-Hung Kung

Yun-Ren Wang

I-Ming Lai

Hsien-Ta Chung

Jung-Tsung Tseng

Ya-Hsueh Hsieh

Yun-San Huang

Teng-Chun Hsuan

Chen-Kuo Chiang

Hsin-Huei Wu

Michael W Huang

Zhi-Jian Wang

Ching-Nan Hwang

Chi-Heng Lin

Pong-Wey Huang

A device includes a fin structure, a gate structure, a first source/drain epitaxial structure and, a second source/drain epitaxial structure. The fin structure over a substrate and includes a bottom portion protruding from the substrate and a top portion over the bottom portion. An interface between the bottom portion and the top portion comprises oxygen and has an oxygen concentration lower than about 1.E+19 atoms/cm. The gate structure covers the fin structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are over the top portion of the fin structure and on opposite sides of the gate structure.

Semiconductor device

A method for generating an extreme ultraviolet (EUV) radiation includes simultaneously irradiating two or more target droplets with laser light in an EUV radiation source apparatus to produce EUV radiation and collecting and directing the EUV radiation produced from the two or more target droplet by an imaging mirror.

Method of manufacturing integrated circuit

The present disclosure describes methods and systems for radical-activated etching of a metal oxide. The system includes a chamber, a wafer holder configured to hold a wafer with a metal oxide disposed thereon, a first gas line fluidly connected to the chamber and configured to deliver a gas to the chamber, a plasma generator configured to generate a plasma from the gas, a grid system between the plasma generator and the wafer holder and configured to increase a kinetic energy of ions from the plasma, a neutralizer between the grid system and the wafer holder and configured to generate electrons and neutralize the ions to generate radicals, and a second gas line fluidly connected to the chamber and configured to deliver a precursor across the wafer. The radicals facilitate etching of the metal oxide by the precursor.

Radical-activated etching of metal oxides

A method and structure for providing a two-step defect reduction bake, followed by a high-temperature epitaxial layer growth. In various embodiments, a semiconductor wafer is loaded into a processing chamber. While the semiconductor wafer is loaded within the processing chamber, a first pre-epitaxial layer deposition baking process is performed at a first pressure and first temperature. In some cases, after the first pre-epitaxial layer deposition baking process, a second pre-epitaxial layer deposition baking process is then performed at a second pressure and second temperature. In some embodiments, the second pressure is different than the first pressure. By way of example, after the second pre-epitaxial layer deposition baking process and while at a growth temperature, a precursor gas may then be introduced into the processing chamber to deposit an epitaxial layer over the semiconductor wafer.

Epitaxial growth methods and structures thereof

The structure of a semiconductor device with negative capacitance (NC) dielectric structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming a fin structure with a fin base portion and a fin top portion on a substrate, forming a spacer structure in a first region of the fin top portion, and forming a gate structure on a second region of the fin top portion. The spacer structure includes a first NC dielectric material and the gate structure includes a gate dielectric layer with a second NC dielectric material different from the first NC dielectric material.

Field effect transistor with negative capacitance dielectric structures

The present disclosure describes a semiconductor device includes a first fin structure, an isolation structure in contact with a top surface of the first fin structure, a substrate layer in contact with the isolation structure, an epitaxial layer in contact with the isolation structure and the substrate layer, and a second fin structure above the first fin structure and in contact with the epitaxial layer.

Independent control of stacked semiconductor device

An apparatus includes a beam conditioning assembly configured to output one or more wavelengths to a substrate being processed and receive one or more reflected wavelengths from the substrate, and a machine learning device configured to process the one or more reflected wavelengths to predict a process variable and compare the predicted process variable with a measured process variable to obtain a comparison result.

Interferometer systems and methods for real time etch process compensation control

A semiconductor device with different configurations of nanostructured channel regions and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a fin structure disposed on a substrate, a stack of nanostructured horizontal channel (NHC) regions disposed on the fin structure, a nanostructured vertical channel (NVC) region disposed within the stack of NHC regions, a source/drain (S/D) region disposed on the fin structure, and a gate structure disposed on the NHC regions and on portions of the NVC region that are not covered by the NHC regions and the fin structure.

Nanostructured channel regions for semiconductor devices

A semiconductor device includes a substrate having a semiconductor fin. A gate structure is over the semiconductor fin, in which the gate structure has a tapered profile and comprises a gate dielectric. A work function metal layer is over the gate dielectric, and a filling metal is over the work function metal layer. A gate spacer is along a sidewall of the gate structure, in which the work function metal layer is in contact with the gate dielectric and a top portion of the gate spacer. An epitaxy structure is over the semiconductor fin.

Semiconductor device and manufacturing method thereof

The present disclosure describes a method includes forming a fin structure including a fin base portion and a stacked fin portion on a substrate. The stacked fin portion includes a first semiconductor layer on the fin base portion, a second semiconductor layer above the first semiconductor layer, and a sacrificial semiconductor layer between the first and second semiconductor layers. The method further includes replacing the sacrificial semiconductor layer with a negative capacitance (NC) layer and forming gate electrodes around the NC layer, the first semiconductor layer, and the second semiconductor layer. The NC layer includes an NC dielectric material.

Field effect transistors with negative capacitance layers

A semiconductor device with different configurations of gate structures and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a stack of nanostructured channel regions disposed on a fin structure, a first gate structure disposed within the stack of nanostructured channel regions, a second gate structure surrounds the first gate structure about a first axis and surrounds the nanostructured channel regions about a second axis different from the first axis, and first and second contact structures disposed on the first and second gate structures, respectively.

Gate structures for semiconductor devices

A fin field effect transistor (Fin FET) device includes a fin structure extending in a first direction and protruding from an isolation insulating layer disposed over a substrate. The fin structure includes a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer. The Fin FET device includes a gate structure covering a portion of the fin structure and extending in a second direction perpendicular to the first direction. The Fin FET device includes a source and a drain. Each of the source and drain includes a stressor layer disposed in recessed portions formed in the fin structure. The stressor layer extends above the recessed portions and applies a stress to a channel layer of the fin structure under the gate structure. The Fin FET device includes a dielectric layer formed in contact with the oxide layer and the stressor layer in the recessed portions.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

Grid structures of ion beam etching (IBE) systems

Laser interference fringe control for higher EUV light source and EUV throughput

Growing community of inventors

Taipei, Taiwan

Chan-Lon Yang