Infineon Technologies Ag

Chan Lim

Kil-Ho Lee

Bum Ki Moon

A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

High-k dielectric film, method of forming the same and related semiconductor device

Methods of fully siliciding semiconductive materials of semiconductor devices are disclosed. A preferred embodiment comprises depositing an alloy comprised of a first metal and a second metal over a semiconductive material. The device is heated, causing atoms of the semiconductive material to move towards and bond to the atoms of the second metal, leaving vacancies in the semiconductive material, and causing atoms of the first metal to move into the vacancies in the semiconductive material.

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Curpertino, CA, United States of America

Chan Lim