Hyundai Electronics Industries Co. Ltd.

Hynix Semiconductor Inc.

Hyundai Electronics Inc. Co., Ltd.

Chan Lim

Han Sang Song

Kyong Min Kim

You Sung Kim

Ki Seon Park

Kyong-Min Kim

Chang Seo Park

Min-Soo Kim

Jong Min Lee

Se Aug Jang

Byung Jin Cho

Kil Ho Lee

Yong-Sik Yu

Hyung Bok Choi

Chung-Tae Kim

Heung-Sik Kwak

Hyuk Kyoo Jang

A method for manufacturing an aluminum oxide film for use in a semiconductor device, the method including the steps of preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber, supplying an aluminum source material and NH gas into the reaction chamber simultaneously for being absorbed on the semiconductor substrate, discharging unreacted MTMA or by-product by flowing nitrogen gas into the reaction chamber or vacuum purging, supplying an oxygen source material into the reaction chamber for being absorbed on the semiconductor substrate, and discharging unreacted oxygen source or by-product by flowing nitrogen gas into the reaction chamber or vacuum purging.

Method for manufacturing aluminum oxide films for use in semiconductor devices

A method for manufacturing an aluminum oxide film for use in a semiconductor device which includes the following steps: preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber; supplying modified trimethyl aluminum (MTMA) as an aluminum source material into the reaction chamber so that it could be absorbed on the semiconductor substrate; discharging unreacted MTMA or by-product through a first pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; supplying an oxygen source into the reaction chamber so that it could be absorbed on the semiconductor substrate; and discharging an unreacted oxygen source or by-product through a second pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status.

Method for manufacturing aluminum oxide film for use in a semiconductor device

There is disclosed a method of manufacturing a capacitor in a semiconductor device. The present invention forms a Ru film as a lower electrode of the capacitor in which a Ta O film is used as a dielectric film by introducing Ru of a raw material, oxygen and NH in order to reduce oxygen or a NH plasma process as a subsequent process is performed in order to remove oxygen existing on the surface of the Ru film. Therefore, the present invention can prevent oxidization of a diffusion prevention film due to oxygen existing in a Ru film during annealing process performed after deposition of a Ta O film and thus improve reliability of the device.

Method of manufacturing a capacitor in a semiconductor device

A semiconductor device for use in a memory cell includes an active matrix an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of lower electrodes formed on top of the conductive plugs, Ta O films formed on the lower electrodes, composite films formed on the Ta O films and upper electrodes formed on the composite films.

Method for manufacturing a semiconductor device having incorporated therein a high K capacitor dielectric

A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD) which begins with setting a wafer in a reaction chamber. Thereafter, a zirconium source material of Zr(OC(CH ) ) (zirconium tetra-tert-butoxide) is supplied into the reaction chamber and then, an unreacted Zr(OC(CH ) ) is removed by a N purge or a vacuum purge. Subsequently, an oxygen source material is supplied into the reaction chamber, wherein the oxygen source material is selected from the group consisting of vaporized water (H O), O gas, N O gas and O gas. Finally, an unreacted oxygen source material is purged out from the reaction chamber.

Method for manufacturing zirconium oxide film for use in semiconductor device

In a method of manufacturing an aluminum oxide film using atomic layer deposition, alcohol is delivered as an oxygen source instead of water vapor into a reactor via a different delivery line from an aluminum source. Thus, the disclosed method can prevent degradation of an aluminum oxide thin film in uniform fashion by a chemical vapor deposition method that is parasitically generated. Also, an activation gas is delivered into the reactor at about the same time an aluminum source and an alcoholic gas is delivered. Therefore, the disclosed method can prevent reduction in the deposition rate and also prohibit degradation in an electrical property by impurity.

Method of manufacturing an aluminum oxide film in a semiconductor device

There is disclosed a method of manufacturing a capacitor in a semiconductor device. In a Ta O capacitor using a Ru lower electrode, the method processes the Ru lower electrode at low temperature before a Ta O film of a dielectric film is deposited, so that Ru crystal particles are filled with oxygen atoms to form a good quality RuO . Therefore, the disclosed method can prevent a lift phenomenon of a thin film by prohibiting a stress of the Ta O dielectric film due to RuO generated between the Ta O dielectric film and the Ru lower electrode during the deposition process of a Ta O dielectric and a subsequent annealing process. Also, the disclosed method can prevent diffusion of oxygen atoms and oxidization of a TiN film underlying the Ru film from the Ta O dielectric film. As a result, the method can improve leakage current and electrical characteristics of a capacitor.

A method is disclosed for forming an aluminum oxide film on a semiconductor device. In a process of depositing an aluminum oxide film by atomic layer deposition method using TMA (trimethyl aluminum; Al(CH ) ) as an aluminum source and H O as an oxygen reaction gas, the disclosed method supplies a NH reaction gas at the same time when an aluminum source is supplied. Therefore, it can increase the growth rate of an aluminum oxide film and can also improve the characteristic of preventing penetration of hydrogen into an underlying layer or a semiconductor substrate. Thus, the disclosed method can prevent degradation in a charge storage characteristic in a capacitor and lower in an electrical characteristic of various elements, thus improving an overall characteristic of a semiconductor device.

Method of forming an A1203 film in a semiconductor device

The present invention relates generally to a method of manufacturing a semiconductor device. There is disclosed a method of manufacturing a semiconductor device capable of obtaining a higher static capacity and a lower leak current characteristic. According to the present invention, the method includes forming a lower electrode and forming a tantalum oxide film. In particular, it performs a plasma process during the process of forming the tantalum oxide film, and in the last step of forming the tantalum oxide firm it controls the amount of source fluid to form a tantalum oxy-nitride film, thus forming an upper electrode.

There is disclosed a method of manufacturing a capacitor in a semiconductor device capable of effectively removing the organic impurity of a Ta O film by performing an in-situ plasma process using the mixture gas of nitrogen and oxygen during the process of forming the Ta O film as the dielectric film of the capacitor. Thus, it can reduce the impurity of the Ta O film to increase the supply of oxygen, and thus can improve the dielectric and leak current characteristic of the Ta O film. Further, it can prohibit oxidization of the underlying electrode, thus reducing the thickness of the equivalent oxide film of the capacitor as possible and sufficiently securing the capacitance of the capacitor. The method according to the present invention includes forming a polysilicon film on a semiconductor substrate in which a given underlying structure is formed; sequentially forming a first buffer layer and a metal layer on the polysilicon film to form a lower electrode; forming a Ta O film on the metal layer, wherein the process of depositing the Ta O film is performed by a plasma process under the mixture gas atmosphere of nitrogen and oxygen; and forming a second buffer layer and an upper electrode on the Ta O film.

Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layer

There is disclosed a method of making a high dielectric capacitor of a semiconductor device using Ta,O,, BST((Ba,Sr,)TiO,) etc. of a high dielectric characteristic as a capacitor dielectric film in a very high integrated memory device. The present invention has its object to provide a method of manufacturing a high dielectric capacitor of a semiconductor device, which can effectively remove carbon contained within the thin film after deposition of the BST film and defects of oxygen depletion caused upon deposition of the thin film and which can also remove carbon contained within the thin film after deposition of the tantalum oxide film and defects of oxygen depletion caused upon deposition of the thin film, without further difficult processes or without any deterioration of the electrical characteristic of the capacitor. It employs the technology which is able to effectively removing defects of carbon and oxygen depletion within the thin film, by forming a plasma O,gas having a good reactivity and by processing the plasma for the BST thin film and tantalum oxide film. Thus, it can extend the lifetime of the activated oxygen of oxygen, which had been a problem in processing a conventional UV-O,, by means of plasma process using O,gas. Therefore, it can effectively remove defects of carbon and oxygen within the BST thin film and tantalum oxide film without complicating the process or deteriorating the electrical characteristic of the capacitor. The present invention also proposes a detailed process condition, which can optimize the plasma process using O,gas.

Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma

The present invention relates to a method of manufacturing a capacitor in a semiconductor device. It is designed to solve the problem due to oxidization of the surface of the underlying tungsten electrode during thermal process performed after depositing Ta,O,to form a dielectric film in a Ta,O,capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode. Thus, the present invention includes forming a good thin WO,film by processing the surface of the underlying tungsten electrode by low oxidization process before forming a Ta,O,dielectric film and then performing deposition and thermal process of Ta,O,to form a Ta,O,dielectric film. As a good WO,film is formed on the surface of the underlying tungsten electrode before forming a Ta,O,dielectric film, the grain boundary of the tungsten film is filled with oxygen atoms, thus preventing diffusion of oxygen atoms from the Ta,O,dielectric film during a subsequent thermal process. Also, as a further oxidization of the surface of the underlying tungsten electrode by the WO,film could be prevented, thereby improving the characteristic of the leak current of the Ta,O,capacitor.

There is disclosed a method of manufacturing a capacitor of a semiconductor device by which a CVD TiN film and a MOCVD TiN film, and a polysilicon film are sequentially stacked in forming an electrode on a Ta,O,dielectric thin film. Therefore, it can prevent changes in thickness of the effective oxide film of the Ta,O,capacitor against the characteristics of each of the CVD TiN film and the MOCVD TiN film, even after a rapid thermal process. It can also improve the step coverage, thus greatly improving the stability and reliability of the capacitor.

Method of manufacturing a capacitor in a memory device

A method for forming a layer of hemispherical silicon grains having a desired density and a desired shape in order to increase the surface area of the storage electrode of a capacitor. The method involves the formation of a thin oxide film over an under silicon layer to be formed with hemispherical silicon grains, so that the formation of those hemispherical silicon grains can be carried out in such a manner that the hemispherical silicon grains have a desired density and a desired shape under given conditions irrespective of whether or not the under silicon layer is doped with impurity ions and the crystalline structure of the under silicon layer.

Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device

There is provided a method for forming element isolation insulating film of a semiconductor device by employing PBL method for reducing the bird's beak and increasing the length of the effective active region. The method comprising the steps of forming a pad-oxide film, a stack-silicon film, and a nitride film on a semiconductor substrate in sequence; forming an element isolation region by selectively patterning the nitride film with an etching process by using an element isolation mask; and forming an element isolation film by field-oxidizing the element isolation region over the semiconductor substrate.

Growing community of inventors

Ichon-shi, South Korea

Chan Lim