Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

National Institute for Materials Science

Industry-University Cooperation Foundation Hanyang University

Samsung Electro-mechanics Co., Ltd.

Korea Institute of Ceramic Engineering and Technology

Hasuck Kim

Chan Kwak

Alexey Alexandrovichserov

Doh Won Jung

Daejin Yang

Si-Hyun Lee

Hyeon Cheol Park

Hyungjun Kim

Jong Wook Roh

Youngjin Cho

Myoung-Ki Min

Jinyoung Hwang

Sungwoo Hwang

Jongmin Lee

Changsoo Lee

Se Yun Kim

Euncheol Do

Giyoung Jo

Ho-Jin Kweon

Woojin Lee

Yoon Chul Son

Yun Sung Woo

Sang-mock Lee

Takayoshi Sasaki

Kyoung-Seok Moon

Hyun Sik Kim

Kwanghee Kim

Geun-Seok Chai

Kwang Hee Kim

Jae-young Choi

Jun-Won Suh

Hee-Tak Kim

Chang Soo Lee

Ki Hong Kim

Jooho Lee

Sang-Il Han

Changseung Lee

In-Hyuk Son

Eun-Hyoung Cho

Hee-jung Park

Weonho Shin

Minoru Osada

Soon-Ki Kang

Hyeoncheol Park

Mi Jeong Kim

Sang Mock Lee

Tae Won Jeong

Hiesang Sohn

Taewon Jeong

Yong-Ho Choa

Chan-hee Park

Hye-A Kim

Soo-yeon Seo

Doh-won Jung

Junghwa Kim

Hyangsook Lee

Eun-hyoung Cho

Tae-gon Kim

Woong Ko

Jaekwan Kim

Hee Jung Park

Kyu Hyoung Lee

Won-Hyouk Jang

Yasuo Ebina

Youngnam Kwon

Hyosug Lee

Eunhyoung Cho

Dong Su Ko

SangWoon Lee

Inyong Song

Byungki Ryu

Jiye Kim

Sung-jin Ahn

Dong-Su Ko

Weon Ho Shin

Dong-hee Yeon

Jae-Young Choi

Yoon Chui Son

Osada Minoru

Sasaki Takayoshi

Taniguchi Takaaki

Dohwon Jung

Takaaki Taniguchi

Myoung Pyo Chun

Chan-Hee Park

Go-Ul Choi

A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of ABOthat has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein 'A' is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The ABOmaterial may be NaNbOin which bandgap energy thereof is greater than that of STO. The ABOmaterial may have relative density that is greater than 90% or more.

Ternary paraelectric material with space group Cc and method of manufacturing the same

Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

Dielectric material, device comprising dielectric material, and method of preparing dielectric material

A sintering jig according to the disclosure includes a first plate including a plurality of protrusions and a second plate stacked on the first plate and including through holes corresponding to the protrusions. The through hole includes a cylindrical portion through which the protrusion enter and exit and a conical portion widening towards an upper surface of the second plate from the cylindrical portion.

Sintering jig

Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions.ABO&#x2003;&#x2003;&#x3c;Formula 1&#x3e; In Formula 1, A, B, x, y, and z are disclosed in the specification.

Dielectric thin film, integrated device including the same, and method of manufacturing the dielectric thin film

A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.

Two-dimensional perovskite material, dielectric material and multi-layered capacitor including the same

Provided is a method of preparing a dielectric film having a nanoscale three-dimensional shape and including an oxide, the oxide represented by RMOwhere R is a divalent element and M is a pentavalent element, the method may include synthesizing a target material, the target material including the divalent element and the pentavalent element; and forming the oxide by depositing the divalent element and the pentavalent element, from the target material, onto a substrate such that the oxide includes a perovskite-type crystal structure, 1.3&#x3c;B/A&#x3c;1.7, and 9.0&#x2264;C&#x3c;10.0.

Dielectric thin film, capacitor including the dielectric thin film, and method for manufacturing the dielectric thin film

Provided are a dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film, the dielectric monolayer thin film including an oxide which is represented by Formula 1 and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen.ABCnO&#x2003;&#x2003;&#x3c;Formula 1&#x3e;

Dielectric monolayer thin film, capacitor and semiconductor device each including the same, and method of forming the dielectric monolayer thin film

A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

Single crystal material and method of forming the same and stacked structure and ceramic electronic component and device

An electrode structure includes: a first nonconductive layer; a first conductive layer disposed on the first nonconductive layer; a second nonconductive layer disposed on the first conductive layer; a second conductive layer disposed on the second nonconductive layer; and a third nonconductive layer disposed on the second conductive layer, where at least one of the first conductive layer and the second conductive layer includes a two-dimensional conductive material.

Electrode structure and touch detecting sensor using the same

A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.

Dielectric material, method of manufacturing thereof, and dielectric devices and electronic devices including the same

Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.(RbA)(BTa)O&#x2003;&#x2003;&#x3c;Formula 1&#x3e; In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1&#x2264;x&#x2264;0.2, 0&#x2264;y&#x2264;0.2, and 0&#x2264;&#x3b4;&#x2264;0.5 are satisfied.

Dielectric, capacitor including dielectric, semiconductor device including dielectric, and method of manufacturing dielectric

A ceramic electronic component includes a pair of electrodes facing each other and a dielectric layer disposed between the pair of electrodes and including a plurality of ceramic nanosheets, where the plurality of ceramic nanosheets has a multimodal lateral size distribution expressed by at least two separated peaks, a method of manufacturing the same, and an electronic device including the ceramic electronic component.

Ceramic electronic component including ceramic nanosheets having multimodal lateral size distribution and method of manufacturing the same and electronic device

A method of manufacturing a ceramic dielectric, including: heat-treating a barium precursor or a strontium precursor, a titanium precursor, and a donor element precursor to obtain a conducting or semiconducting oxide, preparing a mixture including the conducting or semiconducting oxide and a liquid-phase acceptor element precursor, and sintering the mixture to form a ceramic dielectric, wherein the ceramic dielectric includes a plurality of grains and a grain boundary between adjacent grains, and wherein the plurality of grains including an insulating oxide comprising an acceptor element derived from the acceptor element precursor.

Ceramic dielectric and method of manufacturing the same and ceramic electronic component and electronic device

An electrical conductor includes: a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets includes a halogen, a chalcogen, a Group 15 element, or a combination thereof on a surface of the ruthenium oxide nanosheet.

Electrical conductors, production methods thereof, and electronic devices including the same

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Yongin-si, South Korea

Chan Kwak