Lg Display Co., Ltd.

Chan Ki Ha

Byoung Ho Lim

Bong Chul Kim

Cheol Se Kim

Kwang Sik Oh

Jae Hyung Jo

Kyo Ho Moon

Yong Soo Cho

Eung Do Kim

Sang Moo Park

Kyechul Choi

Min Jae Lee

A method of manufacturing oxide thin film transistor and display device are provided. In the method of manufacturing an oxide thin film transistor, the method includes: forming an active layer of an oxide semiconductor on a substrate, and performing surface treatment with plasma for the active layer to permeate oxygen into the active layer.

Method of manufacturing oxide thin film transistor and display device

A thin film transistor (TFT) for a liquid crystal display device includes a gate electrode, a source electrode, a drain electrode, an active region including a first semiconductor layer and a second semiconductor layer interposed within the first semiconductor layer, and an ohmic contact layer formed on the active region, wherein the source and drain electrodes are formed on the ohmic contact layer.

Array substrate of liquid crystal display and method for fabricating the same

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Incheon, South Korea

Chan Ki Ha