Lg Innotek Co., Ltd.

Lg Innotek

Chan Keun Park

Jae Woong Han

Sul Hee Kim

Hwan Hee Jeong

Hyeong Jun Kim

Myung Hoon Jung

An embodiment relates to an ultraviolet light-emitting device, a method for manufacturing the ultraviolet light-emitting element, a light-emitting element package, and a lighting device. An ultraviolet light-emitting element according to an embodiment includes: a first conductive type first semiconductor layer having a light extraction structure; an etching-blocking layer on the first conductive type first semiconductor layer; a first conductive type second semiconductor layer on the etching-blocking layer, an active layer on the first conductive type second semiconductor layer; a second conductive type semiconductor layer on the active layer; and an electron spreading layer disposed between the etching-blocking layer and the active layer, wherein the electron spreading layer includes a first conductive type or an undoped AlGaN-based or a GaN-based semiconductor layer, an undoped AlN, and a first conductive type AlGaN-based second semiconductor layer.

Ultraviolet light-emitting element and light-emitting element package

An embodiment relates to a light emitting element, a method for manufacturing a light emitting element, a light emitting element package, and a lighting system. An ultraviolet light emitting element according to an embodiment may comprise: a first conductivity type semiconductor layer (); an active layer () comprising a quantum barrier (B) and a quantum well (W), the active layer () being arranged on the first conductivity type semiconductor layer (); and a second conductivity type semiconductor layer () on the active layer (). The quantum barrier (B) may comprise an undoped AlGaN layer (0&#x2264;x&#x2264;1) (BU) and an n-type AlGaN layer (0&#x2264;y&#x2264;1) (BN).

Ultraviolet light emitting element and lighting system having a quantum barrier structure for improved light emission efficiency

An embodiment relates to an ultraviolet light-emitting device, a method for manufacturing an ultraviolet light-emitting device, a light-emitting device package and an illumination apparatus. The ultraviolet light-emitting device includes a first conductive-type semiconductor layer; an active layer comprising a plurality of quantum walls and a plurality of quantum wells and disposed on the first conductive-type semiconductor layer; a second conductive-type first semiconductor layer disposed on the active layer; an electron blocking layer disposed between the active layer and the second conductive-type first semiconductor layer; and a second conductive-type second semiconductor layer disposed between the last quantum wall of the active layer and the electron blocking layer, wherein the second conductive-type second semiconductor layer includes a p-type AlGaN layer (0&#x2264;x1&#x2264;1) and a p-type InAlGaN layer (0&#x2264;x2&#x2264;1, 0&#x2264;y&#x2264;1, 0&#x2264;x2+y&#x2264;1).

Ultraviolet light emitting diode and light emitting diode package

Embodiments relates to an ultraviolet light emitting diode, a method of manufacturing an ultraviolet light emitting diode, a light emitting diode package, and a LIGHTING DEVICE. An ultraviolet light emitting diode according to an embodiment includes: a substrate; a first undoped GaN layer including a planar upper surface and a V-pit on the substrate; a first nitride layer on the V-pit of the first undoped GaN layer; a first undoped AlGaN-based semiconductor layer on the first undoped GaN layer and the first nitride layer; and a second undoped GaN layer on the first undoped AlGaN-based semiconductor layer, wherein the first undoped AlGaN-based semiconductor layer includes a first region on the planar upper surface of the first undoped GaN layer and a second region located on the V-pit of of the first undoped GaN layer, and wherein an Al concentration of the first region may be greater than that of the second region.

Ultraviolet light emitting diode, light emitting diode package, and lighting device

One embodiment relates to a light-emitting device, a method for manufacturing the light-emitting device, a light-emitting device package, and a lighting system. The light-emitting device, according to the one embodiment, can comprise: a first conductive semiconductor layer; an active layer on the first conductive semiconductive layer; a gallium nitride based superlattice layer on the active layer; and a second conductive semiconductor layer on the gallium nitride based superlattice layer. The gallium nitride based superlattice layer can comprise: a first gallium nitride based superlattice layer on the active layer; and a second gallium nitride based superlattice layer on the first gallium nitride based superlattice layer.

Light-emitting device and lighting system

Disclosed are a light emitting diode and a lighting system having the same. The light emitting diode according to an embodiment may include a first electrode having a plurality of patterns formed on an upper surface thereof; a texture structure having a plurality of patterns corresponding to the plurality of patterns of the first electrode and configured to be in contact with at least one of the plurality of patterns of the first electrode; a first conductive semiconductor layer disposed on the texture structure; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; and a second electrode disposed on the second conductive semiconductor layer.

Light-emitting diode and lighting system

A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conductive semiconductor layer.

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Seoul, South Korea

Chan Keun Park