Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Chan Hoon Park

Je Woo Han

Jae Hong Park

Jun Ho Yoon

Won Chul Lee

Jong Woo Sun

Sung Yeon Kim

Jung Sik Kim

Sang Jin Youn

Yong Moon Jang

Seul Ha Myung

Min Young Song

Jung Mo Sung

Seung Yoon Song

Yil Seug Park

Kyoung Shik Jun

Bong Su Cho

Young Ho Jei

Jae Won Hwang

Hyun Tai Kang

A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

Apparatus for manufacturing semiconductor device and manufacturing method of semiconductor device

Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Method of fabricating semiconductor devices

A front panel operating apparatus and method of a vehicle display device such as a car audio can include a main chassis for accommodating an audio device, a front panel provided in the front side of the main chassis that opens or closes to allow access to a record medium for the audio device. The front panel can have a display part in the front side thereof. A supporting panel can be hinge-coupled to a lower side of the front panel to move a lower end of the front panel forward and backward by sliding from a prescribed location of the main chassis in forward and backward directions of the main chassis. A vertical guide can be formed at the front side of the main chassis, and a protrusion formed on the front panel can be inserted into the vertical guide for controllably moving an upper portion of the front panel up and down.

Front panel operating apparatus and method

Embodiments of the invention provide an information input system for a terminal and a multifunctional button assembly for use in the information input system and methods for operating the same. The multifunctional button assembly can include a lever control button, a rotary button and a switch that can be mounted on a substrate. The multifunctional button assembly of the invention can provide advantages in that since the number of functions provided by the multifunctional button assembly is relatively increased, more functions can be concurrently employed, and a terminal employing the multifunctional button assembly can be manufactured to be light, thin, short and compact.

Information input system for terminal and multifunctional button assembly for use in the same

In a method for controlling a processing apparatus, an error value between an input value of the processing apparatus for processing a subject to be processed, and a measurement value obtained by measuring the subject being processed is obtained. A correction value is computed for correcting the input value of the processing apparatus in the direction of decreasing the error value, and the values are managed as processing data to be utilized in computing a next correction value. Previous processing data having a history identical to that of the subject loaded to the processing apparatus is searched, and a current bias correction value is predicted from a plurality of most recent correction values having the identical history. Also, a current random correction value is predicted by means of a neural network on the basis of a plurality of most recent random correction values. The predicted bias correction value is summed with the random correction value as a current correction value of the processing apparatus.

Method for controlling a processing apparatus

Growing community of inventors

Osan-si, South Korea

Chan Hoon Park