Samsung Electronics Co., Ltd.

Fairchild Korea Semiconductor Ltd.

Korea Institute of Science and Technology

Jusung Engineering Co., Ltd.

Chan-Ho Park

Sang-bum Suh

Jae-hong Park

Myung-June Jung

Jin-Kyeong Kim

Geun-Sik Lim

Young-Soo Kim

Dong-Jin Kim

Jae-hoon Lee

Dong-Yun Shin

Sung-Woo Cho

Tae-Geun Kim

Chan-Ju Park

Kye-Jung Shin

Eunice Eun-Kyeong Kim

Key-Sun Kim

Kee-Dal Nam

Hoh-Gyu Hahn

Jae-Wook Choi

Seon-Hee Seo

Hee-Sup Shin

Chi-Man Song

Sun-Joon Min

Hyun-Jung Her

Soon-Bang Kang

Gyo-Chang Keum

Hye-Whon Rhim

Ae-Nim Pae

Eun-Joo Roh

Hyun-Ah Choo

Hye-Jin Chung

Yong-Seo Cho

Kee-Hyun Choi

Chan-Seong Cheong

Jae-Kyun Lee

Yong-Koo Kang

Woong-Seo Park

He-Sson Chung

Cheol-Ju Lee

Kyung-Il Chol

Ghil-Soo Nam

Eun-A Kim

A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a collector electrode disposed on the other surface of the substrate, a trench gate disposed in the substrate, a field diffusion junction disposed in the substrate, and a first contact connecting the trench gate and the first field plate. The first field plate has a first part extending toward the emitter electrode with respect to the first contact and having a first width, and a second part extending toward the field diffusion junction with respect to the first contact and having a second width. The second width is greater than the first width.

Semiconductor device and method for fabricating the same

Novel benzoarylureido compounds and a use thereof for prevention and/or treatment of the neurodegenerative brain disease are provided. The neurodegenerative brain diseases may include Alzheimer's disease, dementia, Parkinson's disease, stroke, amyloidosis, Pick's disease, Lou Gehrig's disease, Huntington's disease, Creutzfeld-Jakob disease, and the like.

Benzoarylureido compounds, and composition for prevention or treatment of neurodegenerative brain disease containing the same

Provided is a method of booting a computing system which performs boot image transmission and device initialization in parallel. For example, using an Internal RAM and direct memory access (DMA), hardware initialization and loading of boot image from a main storage medium to a main memory are performed in parallel, thereby reducing time spent on booting.

Processor-implemented method for booting a computing system by simultaneously performing hardware initialization and boot image transmission

Provided are a booting apparatus and method using a snapshot image. A snapshot image may be divided into a plurality of blocks. Each of the blocks may be stored in a nonvolatile memory in a compressed or non-compressed format. The snapshot image may be incrementally loaded in units of the blocks during booting. The loading and decompression of the blocks may be performed in parallel.

Selectively compressing blocks of a bootable snapshot image during booting

A gas distribution plate that is installed in a chamber providing a reaction space and supplies a reaction gas onto a substrate placed on a substrate placing plate, wherein the gas distribution plate includes: first and second surfaces opposing to each other, wherein the second surface faces the substrate placing plate and has a recess shape; and a plurality of injection holes each including: an inflow portion that extends from the first surface toward the second surface; a diffusing portion that extends from the second surface toward the first surface; and an orifice portion between the inflow portion and the diffusing portion, wherein the plurality of inflow portions of the plurality of injection holes decrease in gas path from edge to middle of the gas distribution plate, and wherein the plurality of diffusing portions of the plurality of injection holes have substantially the same gas path.

Gas distribution plate and substrate treating apparatus including the same

A power semiconductor device having an improved high breakdown voltage and improved productivity, and a fabrication method thereof are provided. The power semiconductor includes a collector region of a first conductivity type formed in a semiconductor substrate, a base region of second conductivity type formed in the collector region, and an emitter region of the first conductivity type formed in the base region. A channel stop region is formed being spaced a predetermined distance from the base region. An insulative film, a semi-insulating polycrystalline silicon (SIPOS) film, and a nitride film patterned respectively to expose the emitter region, the base region, and the channel stop region are sequentially deposited on the semiconductor substrate. A base electrode, an emitter electrode, and an equipotential electrode connected respectively to the base region, the emitter region, and the channel stop region are formed.

Power semiconductor device using semi-insulating polycrystalline silicon and fabrication method thereof

Power semiconductor device using semi-insulating polycrystalline silicon

A power semiconductor device having an breakdown voltage improving structure and a manufacturing method thereof are provided. A collector region and a base region create a pn junction between them. At least one accelerating region of the same conductivity type as the collector region is formed spaced from the pn junction and at a dose higher than that of the collector region. A field plate overlaps the pn junction and the accelerating region. The field plate has an edge portion that extends past the accelerating region. When a voltage of a reverse direction is applied to the pn junction, an electric field becomes concentrated on the accelerating region as well as on the pn junction and on the edge portion of the field plate. This increases an electric field distribution area and thus also increases the breakdown voltage.

Power semiconductor device employing field plate and manufacturing method thereof

Growing community of inventors

Yongin-si, South Korea

Chan-Ho Park