Mirae Corporation

Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Kukdo Chemical Co., Ltd.

Nippon Steel Chemical & Material Co., Ltd.

Mother's Hands

Chan Ho Park

Chul Ho Ham

Jae Bong Seo

Kiseok Lee

Chan-Sic Yoon

Hyeonok Jung

Woo Young Lim

Ho Keun Song

Young Geun Park

Eun Hyoung Seong

Byeng Gi Lee

Joong Hwi Jee

Jae Myeong Song

Jiung Pak

Tae Sung An

Jin Soo Lee

Jae Hoon Lee

Sung Hoon Kim

Kyung Tae Kim

Sunghee Han

Yong Kwan Kim

Hyun Joo Hwang

Doo Won Kwon

Wonwoo Lee

Ki-Hyung Nam

Chong Kwang Chang

Hye Seung Lee

Dong-Chul Lee

Kyung Rae Byun

Kazuo Ishihara

Min Soo Noh

Pulunsol Cho

Sung June Park

Hyun Ho Oh

Min Hwan Jeon

Hae Jun Park

Masahiro Soh

Hyug Jin Kwon

Eui Sung Hwang

Chul Chae Choi

Jae Hun Jeong

Shin Youp Lee

Ung Hyun Yoo

Kook Hyung Lee

Jang Yong Park

Hyoung Ju Lee

Sung Chel Hwang

Hyun Chae Chung

Eung Yong Lee

Yong Soo Moon

Ku Kyong Kim

Jae Gue Lee

To provide an epoxy resin composition that exhibits excellent low-dielectric properties and that is excellent in copper foil peel strength and interlayer cohesion strength in a printed-wiring board application, as well as an active ester resin that provides the epoxy resin composition. An active ester resin having a polyaryloxy unit containing a dicyclopentenyl group and represented by the following formula (1), and a polyarylcarbonyl unit. Here, Rrepresents a hydrocarbon group having 1 to 8 carbon atoms, Rrepresents a hydrogen atom, or formula (1a) or formula (1b), and at least one Ris formula (1a) or formula (1b); and n represents a number of repetitions of 1 to 5.

Active ester resin, method for producing thereof, epoxy resin composition, cured product thereof, prepreg, laminated board, and material for circuit substrate

An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

Image sensor including fence structure disposed laterally of color filters

The present disclosure relates to a method of preparing a furan monomer having a bifunctional hydroxymethyl group (2, 5-bis(hydroxymethyl) furan (BHMF)). The method includes converting furfuryl alcohol to a low-molecular weight furan mixture extracting and purifying the furan monomer having a bifunctional hydroxymethyl group from the low-molecular weight furan mixture.

Furan monomer having bifunctional hydroxymethyl group and preparation method therefor

According to a patient bed system including a defecation device having an improved piping structure, presented in the present invention, a defecation device is integrally provided in a patient bed, an excrement discharge pipe communicating with a discharge hole at the lower part of a bedpan body is formed by a roundedly inclined piping structure in which excrement flows down by its own weight, an opened end of the excrement discharge pipe can be opened and closed in order to discharge excrement by means of the simple operation of a handle part including an opening and closing member, and an excrement collection polybag in which excrement collection plastic is embedded so as to be discharged in order to facilitate the collection of excrement discharged by a patient is formed so as to be fastened to the excrement discharge pipe, such that, compared with a conventional excrement device, the present invention facilitates cleaning and can increase the convenience of simple operation with one hand.

Patient bed system including defecation device having improved piping structure

A composition for an antifogging coating includes isosorbide epoxy represented by Formula 1 below, a hardener, a hardening accelerator, and a silane coupling agent, 

Composition for antifogging coating and coating film including the antifogging coating

A method of fabricating a semiconductor device includes forming a linear preliminary mask pattern in a first direction on a substrate. The preliminary mask pattern is patterned to provide a plurality of mask patterns that are aligned end-to-end with one another on the substrate and are separated by an exposed portion of the substrate between respective facing ends of the plurality of mask patterns. An auxiliary layer is formed to cover at least sidewalls of the facing ends to reduce a size of the exposed portion to provide a reduced exposed portion of the substrate and the reduced exposed portion of the substrate is etched to form a trench defining active patterns in the substrate aligned end-to-end with one another.

Semiconductor devices using auxiliary layers for trimming margin and devices so formed

Methods of forming semiconductor devices using auxiliary layers for trimming margin

A semiconductor device includes a semiconductor substrate including active portions including first and second dopant regions, word lines on the substrate and extending in a first direction to intersect the active portions, first and second bit lines on the substrate and extending in a second direction to intersect the word lines, and contact structures in regions between the word lines and between the first and second bit lines when viewed from a plan view. The first and second bit lines are connected to the first dopant regions. The contact structures are in contact with the second dopant regions, respectively. The contact structures each include a contact plug and a contact pad. The contact pads contact the second dopant regions. A separation distance between the contact plugs and the first bit lines is less than separation distance between the contact pads and the first bit lines.

Semiconductor device and method for manufacturing the same

A semiconductor device may include: a first semiconductor layer having a first band gap; a second semiconductor layer including first and second regions separately disposed on an upper surface of the first semiconductor layer and having a second band gap wider than the first band gap; and a third semiconductor layer disposed between the first and second regions of the second semiconductor layer, extending up to at least a portion of the first semiconductor layer. The third semiconductor layer may have a channel region doped with an impurity.

Semiconductor device

Disclosed is an apparatus for spinning a test tray and an in-line test handler including the above apparatus, wherein the apparatus may include a supporting unit for supporting a test tray transported between first and second chamber units facing in the different directions, wherein the first chamber unit is provided at a predetermined interval from the second chamber unit; a base unit to which the supporting unit is spinnably connected; and a spinning unit which spins the test tray so that semiconductor devices received in the test tray are tested at the same arrangement in each of the first chamber unit and the second chamber unit.

Apparatus for spinning test tray of in-line test handler and in-line test handler

Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes active portions defined in a semiconductor substrate, a device isolation pattern in a trench formed between the active portions, a gate electrode in a gate recess region crossing the active portions and the device isolation pattern, a gate dielectric layer between the gate electrode and an inner surface of the gate recess region, and a first ohmic pattern and a second ohmic pattern on each of the active portions at both sides of the gate electrode, respectively. The first and second ohmic patterns include a metal-semiconductor compound, and a top surface of the device isolation pattern at both sides of the gate recess region is recessed to be lower than a level of a top surface of the semiconductor substrate.

Semiconductor devices and method of manufacturing the same

A device and method process voice communication service. A mobile terminal device of the present disclosure includes a microphone arranged at one end of a body of the device; a speaker arranged close to the microphone; a transceiver arranged at the other end of the body; a codec including a coder connected to the microphone, a decoder connected to the speaker, and a switch of which one node is connected to one of the coder and the decoder selectively and the other node is connected to the transceiver; and a communication controller which controls the switch to establish a path between the coder and the transceiver and enables the speaker in speakerphone mode.

Apparatus and method for processing voice communication in mobile terminal

A physical structure, apparatus for recording/reproducing on/from a recording medium using the same and method thereof are disclosed, by which the physical structure suitable for such a recording medium as BD and the like may be provided. The present invention includes a plurality of recording layers. Each of the recording layers includes a power test area not provided to a physically same position and a management area not provided to a physically same position, wherein a layer having the power test zone and the management area allocated consecutively includes a test area buffer allocated to the power test zone.

Recording medium, apparatus for recording/reproducing data on/from the same and method thereof

A socket assembly for testing semiconductor devices includes a socket board electrically connected to an outside testing device, and a socket guide which covers the socket board. The socket guide has an open part to receive the semiconductor device and allows pins on the semiconductor device to couple with connection pins on the socket board. A spacer may be interposed between the socket board and the socket guide to maintain a predetermined distance between the semiconductor device and the socket board. In this manner, the balls or the leads of each semiconductor device may be pressed onto connection pins of the socket to a predetermined depth, even when the semiconductor devices have different thicknesses.

Socket assembly for testing semiconductor device

A light guide plate for a surface light-emitting device and a method of manufacturing the same are disclosed wherein the light guide plate is constructed in the form of an optical waveguide including an upper cladding film, core films formed with V-cut grooves, and a lower cladding film, so that since the upper and lower cladding films with a relatively low refractive index are respectively located on upper and lower surfaces of the core films, external foreign substances cannot penetrate into the core films, and the core films are not brought into contact with other components, whereby optical transmission properties are not changed and brightness can be also enhanced, and since the V-cut grooves are formed or both the V-cut grooves and optical waveguides are formed at the same time by means of a simple hot embossing process, the manufacturing costs can be saved.

Light guide plate for surface light-emitting device and method of manufacturing the same

Growing community of inventors

Cheonan-si, South Korea

Chan Ho Park