Samsung Electronics Co., Ltd.

Seondo Electric Co., Ltd.

Chan-ho Park

Kyoung-nyo Hwangbo

Mi-kyoung Kim

Jae-hoon Lee

Nam-young Lee

Jung-Hwan Kim

Jae-hong Park

Hyung-gyu Lee

Suk-Kyun Lee

Tae-Geun Kim

Kyeong-chae Lim

Won-Sang Choi

Seong-Jun Ahn

Young-bong Kim

Hyun-Jung Her

Sine Kim

Young-il Seo

Yong-Hee Lee

Jeong-Kil Lee

Nam-Ki Cho

Kyoung-Nyo Hwangbo

A method for providing a graphical user interface (GUI) to receive a user command on a touch screen, and a multimedia apparatus using the same. The method for providing a GUI includes determining whether an enlargement command for a GUI item is received, and enlarging the GUI item. Therefore, it is possible to enable a user to operate the GUI item more correctly, and to provide the superior visual effect when the GUI item is operated.

Method for providing graphical user interface (GUI), and multimedia apparatus applying the same

An interface method for a mobile terminal includes: receiving in the order of time and saving two or more types of messages corresponding to two or more types of first applications; integrating and configuring the two or more types of messages using a second application, which integrates and manages the two or more types of first applications; and displaying the two or more types of messages with the identification information on the type of each of the messages using the second application.

Interface for managing messages in a mobile terminal

A method for guiding location includes commencing a call between a first terminal and a second terminal, the first terminal requesting the collection of location information from the second terminal, receiving the location information of the second terminal and displaying on the first terminal a geographic information map displaying the location information, and the user of the first terminal transmitting to the second terminal direction information that is displayed on the geographic information map. As a result, more intuitive and convenient location guidance is provided.

Method for guiding location, machine-readable saving medium, and mobile communication terminal

An audio device and a position recognition method of the audio device are disclosed. According to an example embodiment, an audio device includes at least one infrared (IR) transceiver and a controller configured to recognize whether the audio device is positioned to a left or right of another audio device in response to a signal received by the at least one IR transceiver.

Audio device and method of recognizing position of audio device

A semiconductor power device includes a substrate, a plurality of gate electrode structures, a floating well region and a termination ring region. The substrate has a first region and a second region. A plurality of gate electrode structures is formed on the substrate, each of the gate electrode structures extends from the first region to the second region and includes a first gate electrode, a second gate electrode and a connecting portion, the first and second gate electrodes extend in a first direction, and the connecting portion connects end portions of the first and second gate electrodes to each other. The floating well region is doped with impurities between the gate electrode structures in the first region of the substrate, and the floating well region has a first impurity concentration and a first depth. The termination ring region is doped with impurities in the second region of the substrate, is spaced apart from the gate electrode structures, and has a ring shape surrounding the first region, and has the first impurity concentration and the first depth. The semiconductor power device may have a high breakdown voltage.

Semiconductor power devices and methods of manufacturing the same

A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

High-electron-mobility transistor

A semiconductor device includes a channel layer on a substrate; cell trench patterns in the channel layer; and a source pattern on the cell trench patterns. The source pattern includes: grooves, each having inclined sidewalls and bottom that extends in a horizontal direction in a portion of the channel layer between the cell trench patterns, source regions at the inclined sidewalls of the grooves, source isolation regions at the bottoms of the grooves, and a source electrode at interior regions of the grooves and that has a planar upper surface.

Semiconductor device having planar source electrode

Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer.

Growing community of inventors

Seoul, South Korea

Chan-ho Park