Samsung Electronics Co., Ltd.

Chan-hee Jeon

Han-Gu Kim

Sung-pil Jang

Jun-Bae Kim

Han-gu Kim

Young-Ok Cho

Min-sun Hong

Tae-hoon Ha

Doo-hyung Kim

Jung-soon Lee

The pad interface circuit includes a first stack MOS transistor having a first terminal connected to a pad and a bulk connected to a first supply voltage; a second stack MOS transistor having a first terminal connected to a second terminal of the first stack MOS transistor and a second terminal, a gate terminal, and a bulk that are connected to the first supply voltage; and a voltage level sensing circuit generating a feedback voltage by using a pad voltage applied from the pad. In addition, the feedback voltage is applied to a gate terminal of the first stack MOS transistor.

Pad interface circuit and method of improving reliability of the pad interface circuit

An electrostatic discharge circuit, connected between at least three terminals, the electrostatic discharge circuit including at least one electrostatic discharge circuit element further including at least one circuit element including a body in a floating state. The body in a floating state may provide a path to discharge an electrostatic current. The electrostatic discharge circuit may be a pull-up circuit, a plurality of pull-up circuits, a pull-down circuit, a plurality of pull-down circuits, a power clamp, a plurality of power clamps, or other similar circuit or circuits. The at least three terminals may include one or more power terminals, one or more ground terminals, and/or one or more I/O terminals.

Electrostatic discharge circuit

An electrostatic discharge circuit between a first pad and a second pad including an electrostatic discharge circuit element, including a bipolar transistor path and a resistor path, the electrostatic discharge circuit element alternately discharging an electrostatic current through the bipolar transistor path and the resistor path.

Electrostatic discharge circuit and method of dissipating an electrostatic current

A semiconductor device and method of forming a pad thereof are provided. The device includes: a substrate; at least one first active region disposed in a first region of the substrate; at least one second active region disposed in a second region adjacent to the first region of the substrate; a plurality of first contacts disposed on the second active region; a first insulating layer disposed on the first active region and between the first contacts; a poly layer disposed on the first contacts and the first insulating layer; a plurality of second contacts disposed on the poly layer in the second region; a second insulating layer disposed between the second contacts and on the poly layer in the first region; and a pad disposed on the second insulating layer and the second contacts.

Semiconductor device and method of arranging pad thereof

The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the drain region is a first diffusion structure in which a heavily doped diffusion layer of a second conductivity type is formed in a body region of a second conductivity type. Another source region is a second diffusion structure in which a heavily doped diffusion layer of a first conductivity type and a heavily doped diffusion layer of the second conductivity type are formed in the body region of the second conductivity type. An impurity diffusion structure of the source region in close proximity to the drain region is changed to be operated as a diode, thereby forming a strong current path to ESD (Electro-Static Discharge) or EOS (Electrical Over Stress). As a result, it is possible to prevent the device from being broken down.

Growing community of inventors

Suwon-si, South Korea

Chan-hee Jeon