Powerchip Technology Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Chan-Ching Lin

Chun-Cheng Chen

Chen-Hao Huang

Tzung-Bin Huang

Jui-Cheng Huang

Felix Ying-Kit Tsui

Yi-Shao Liu

Tung-Tsun Chen

Chien-Kuo Yang

Ta-Chuan Liao

Jing-Hwang Yang

Ching-Hua Chen

Hann-Ping Hwang

A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Biological device and biosensing method thereof

This invention provides a memory structure and an operation method thereof. The memory structure includes a triode for alternating current (TRIAC) and a memory cell. The memory cell is electrically connected to the TRIAC.

Memory structrue and operation method thereof

A method of fabricating a resistive random access memory (RRAM) device is disclosed. A plurality of word lines extending along a first direction are formed on a substrate with a recess between the word lines. A spacer-type resistance layer and a top electrode layer are formed on a sidewall of each of the word lines. A photoresist stripe pattern extending along a second direction is then formed on the substrate. The first direction is perpendicular to the second direction. An etching process is performed to remove the top electrode layer and the spacer-type resistance layer not covered by the photoresist stripe pattern to form a plurality of top electrodes. A diode is formed on each of the top electrodes.

Method for fabricating resistive random access memory

A resistive random access memory (RRAM) unit includes at least one bit line extending along a first direction, at least one word line disposed on a substrate and extending along a second direction so as to intersect the bit line, a hard mask layer on the word line to isolate the word line from the bit line, a first memory cell on a sidewall of the word line, and a second memory cell on the other sidewall of the word line.

Resistive random access memory and fabrication method thereof

Growing community of inventors

Hsinchu, Taiwan

Chan-Ching Lin