Samsung Sdi Co., Inc.

Intellectual Keystone Technology LLC

Chan-Bin Mo

Young-Jin Kim

Young-Su Kim

Dong-Seop Kim

Doo-Youl Lee

Young-Sang Park

Sang-jin Park

Min-Seok Oh

Min-Chul Song

Min Young Park

Sung-Chan Park

Yun-Seok Lee

Sang-Jin Park

Sang-Won Seo

Cho-Young Lee

Nam-Kyu Song

Jun-Ki Hong

Jae-Ho Shin

Yeon-Ik Jang

Chan-Yoon Jung

Hoon-Ha Jeon

Min-Sung Kim

Kyoung-Jin Seo

Heung-Kyoon Lim

A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted. According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.

Method of manufacturing photoelectric device

A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Solar cell

A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.

Photoelectric device

Growing community of inventors

Yongin-si, South Korea

Chan-Bin Mo