Hynix Semiconductor Inc.

Chan Bae Kim

Hyeon Ju An

Chai O Chung

Sung Kyu Min

Hyo Seok Lee

Sang Tae Ahn

Ja Chun Ku

Eun Jeong Kim

Jong Min Lee

Chae O Chung

A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si&#x2014;H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Template derivative for forming ultra-low dielectric layer and method of forming ultra-low dielectric layer using the same

A process for manufacturing a semiconductor device using a spacer as an etch mask for forming a fine pattern is described. The process includes forming a hard mask layer over a target layer that is desired to be etched. A sacrificial layer pattern is subsequently formed over the hard mask layer. Spacers are formed on the sidewalls of the sacrificial layer pattern. The protective layer is formed on the hard mask layer portions between the sacrificial patterns formed with the spacer. The sacrificial layer pattern and the protective layer are then later removed, respectively. The hard mask layer is etched using the spacer as an etching mask. After etching, the spacer is removed. Finally, the target layer is etched using the etched hard mask as an etching mask.

Method for manufacturing a semiconductor device using a spacer as an etch mask for forming a fine pattern

A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.

Method for manufacturing semiconductor device utilizing low dielectric layer filling gaps between metal lines

In manufacturing a semiconductor device, a metal film is formed on a semiconductor substrate, and a high-temperature amorphous carbon film pattern for defining a wiring forming area is formed on the metal film. The metal film is etched by using the high-temperature amorphous carbon film pattern as an etching barrier to form a metal wiring. A low-temperature amorphous carbon film as an IMD is formed on the resultant structure so as to cover the metal wiring including the high-temperature amorphous carbon film pattern. The low-temperature amorphous carbon film and the high-temperature amorphous carbon film pattern are etched to form a contact hole, which has greater width in an upper portion than in a lower portion thereof. Finally, a plug metal film is formed on the low-temperature amorphous carbon film to fill the contact hole.

Method of manufacturing semiconductor device for improving contact hole filling characteristics while reducing parasitic capacitance of inter-metal dielectric

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Seoul, South Korea

Chan Bae Kim