Samsung Electronics Co., Ltd.

Chalykh Roman

Donggun Lee

Sanghyun Kim

SeongSue Kim

Jongju Park

Seong-sue Kim

Dong-gun Lee

Sang-hyun Kim

Mun-Ja Kim

A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.

Beam shapers, annealing systems employing the same, methods of heat treating substrates and methods of fabricating semiconductor devices

Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.

Methods of reducing a registration error of a photomask, and related photomasks and methods of manufacturing an integrated circuit

Growing community of inventors

Suwon-si, South Korea

Chalykh Roman