Entegris, Inc.

University of Florida Research Foundation, Incorporated

Chaitanya Ginde

Rajiv K Singh

Deepika Singh

Arul Arjunan

Puneet N Jawali

Sunny De

Aditya Dilip Verma

A slurry for chemical mechanical polishing (CMP) includes an aqueous liquid carrier, an oxygen and anion containing transition metal compound or polyatomic cations including a transition metal and oxygen or hydrogen, and a per-based oxidizer. The anion for the oxygen and anion containing transition metal compound can include oxynitrate, oxychloride, oxyhydroxide, oxyacetate, oxysulfide, or oxysulfate. The per-based oxidizer can be a permanganate compound.

CMP composition for polishing hard materials

A method of CMP includes providing a slurry solution including &#x2265;1 per-compound oxidizer in a concentration between 0.01 M and 2 M with a pH from 2 to 5 or 8 to 11, and &#x2265;1 buffering agent which provides a buffering ratio &#x2265;1.5 that compares an amount of a strong acid needed to reduce the pH from 9.0 to 3.0 as compared to an amount of strong acid to change the pH from 9.0 to 3.0 without the buffering agent. The slurry solution is exclusive any hard slurry particles or has only soft slurry particles that have throughout a Vickers hardness &#x3c;300 Kg/mmor Mohs Hardness &#x3c;4. The slurry solution is dispensed on a hard surface having a Vickers hardness &#x3e;1,000 kg/mmis pressed by a polishing pad with the slurry solution in between while rotating the polishing pad relative to the hard surface.

Hard abrasive particle-free polishing of hard materials

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Gainesville, FL, United States of America

Chaitanya Ginde