Denselight Semiconductors Pte Ltd

Chai Leng Terence Wee

Yee Loy Lam

Yuen Chuen Chan

The present invention relates to a semiconductor photodetector. The photodetector is a waveguide photodetector, which comprises: a waveguide ( ) having a III-V ridge structure including an active layer ( ); a semiconductor layer ( ) deposited on top of the ridge structure; and, metal detector electrodes (not shown) on the surface of the higher refractive index semiconductor layer ( ). The semiconductor layer ( ) has a higher refractive index than the waveguide structure ( ). The ridge structure is configured to widen along the length of the waveguide ( ) such that light passing through the active layer ( ) of the waveguide couples more efficiently up into the higher refractive index semiconductor layer ( ).

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Singapore, Singapore

Chai Leng Terence Wee