Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hitachi, Ltd.

Hiatchi, Ltd.

Chahn Lee

Toshiyuki Yokosuka

Hideyuki Kazumi

Hajime Kawano

Hiroyuki Takahashi

Shahedul Hoque

Kumiko Shimizu

Shuichi Suzuki

Yuichi Satsu

Tomoichi Kamo

Kishio Hidaka

Yasuhisa Aono

Mitsuo Hayashibara

Yoshiyuki Takamori

Hiroshi Makino

Kinya Kobayashi

Manabu Hasegawa

Michio Hatano

Yoshinori Momonoi

Yuzuru Mizuhara

Kouichi Kurosawa

Miki Isawa

The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Charged particle beam device

The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG.).

Charged particle ray device and cross-sectional shape estimation program

The present invention provides a charged particle beam device capable of predicting the three-dimensional structure of a sample, without affecting the charge of the sample. The present invention provides a charged particle beam device characterized in that a first distance between the peak and the bottom of a first signal waveform obtained on the basis of irradiation with a charged particle beam having a first landing energy, and a second distance between the peak and the bottom of a second signal waveform obtained on the basis of irradiation with a charged particle beam having a second landing energy different from the first landing energy are obtained, and the distance between the peak and the bottom at a landing energy (zero, for instance) different from the first and second landing energies is obtained on the basis of the extrapolation of the first distance and the second distance.

Charged particle beam device and pattern measurement device

An object of the invention is to provide a charged particle beam apparatus capable of performing high-precision measurement even on a pattern in which a width of edges is narrow and inherent peaks of the edges cannot be easily detected. In order to achieve the above object, there is proposed a charged particle beam apparatus including an opening portion forming member having a passage opening of a charged particle beam and a detector for detecting charged particles emitted from a sample or charged particles generated by causing the charged particles to collide with the opening portion forming member, the charged particle beam apparatus including: a deflector for deflecting the charged particles emitted from the sample; and a control device for controlling the deflector, the control device performing pattern measurement with the use of a first detected signal in which a signal of one edge is emphasized relatively more than a signal of another edge among a plurality of edges on the sample and a second detected signal in which the signal of the another edge is emphasized relatively more than the signal of the one edge among the plurality of edges.

The scanning charged particle beam microscope according to the present invention is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.

Scanning electron microscope

Provided is an electron beam scanning method for forming an electric field for appropriately guiding electrons emitted from a pattern to the outside of the pattern, and also provided is a scanning electron microscope. When an electron beam for forming charge is irradiated to a sample, a first electron beam is irradiated to a first position () and a second position () having the center () of a pattern formed on the sample as a symmetrical point, and is then additionally irradiated to two central positions () between the first and second irradiation position, the two central positions () being on the same radius centered on the symmetrical point as are the first and second positions. Further, after that, the irradiation of the first electron beam to the central positions between existing scanning positions on the radius is repeated.

Electron beam irradiation method and scanning electronic microscope

A catalytic material and electrode of the present invention are characterized in that the catalyst carrier constituting the above-mentioned catalytic material and electrode includes at least one member selected from the group consisting of nitrogen atoms, oxygen atoms, phosphor atoms, and sulfur atoms. Since the cohesion or growth of catalyst grains can hereby be suppressed, it is possible to provide a highly active catalyst, a high-performance electrode, and a high-output-density fuel cell which uses the same.

Covalently bonded catalyst carrier and catalytic component

Catalytic material, electrode, and fuel cell using the same

Growing community of inventors

Tokyo, Japan

Chahn Lee