Applied Materials, Inc.

Chad Peterson

Hichem M'Saad

Li-Qun Xia

Sumit Agarwal

Ritwik Bhatia

Michael Robert Rice

Anchuan Wang

Sanjeev Baluja

Farhad K Moghadam

Huiwen Xu

Zhuang Li

Yijun Liu

Marc David Shull

A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.

Gas distribution plate with high aspect ratio holes and a high hole density

A showerhead assembly includes a support structure and a porous plate. The support structure includes a support feature. The porous plate has a thermal conductivity of at least about 50 W/(mK) and includes a plurality of pores having an average diameter of less than about 100 um, wherein at least a portion of a perimeter of the porous plate rests on the support feature. The showerhead may be included within a processing chamber that is utilized to process a substrate.

Porous showerhead for a processing chamber

Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.

Decreasing the etch rate of silicon nitride by carbon addition

Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.

Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film

A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm . A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm and less than 2.4 W/cm . The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

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San Jose, CA, United States of America

Chad Peterson