Uchicago Argonne, LLC

Northwestern University

Chad Husko

Mark C Hersam

Joohoon Kang

Joshua D Wood

Jeff Guest

Xavier Checoury

A semiconductor optical device is comprised of a phonon donating material structurally connected to an indirect bandgap material to improve absorption and emission of light in the indirect bandgap material. An excitation energy source provides excitation radiation to the semiconductor optical device to excite electrons in the semiconductor optical device. Phonons from the phonon donating material present in the indirect bandgap material provide a mechanism for increased rates of electron-hole generation and recombination, and electrical leads provide an electrical connection to the semiconductor optical device.

Hybrid phonon-enhanced optical absorbers and emitters

Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.

Hybrid silicon lasers and amplifiers with 2D phosphorene film

Growing community of inventors

Wauconda, IL, United States of America

Chad Husko