Skhynix Inc.

Cha-Young Lee

Pyong-Su Kwag

Young-Jun Kwon

Min-Ki Na

Won-Jun Lee

Sung-Kun Park

Yun-Hui Yang

Kyoung-In Lee

Ho-Ryeong Lee

Donghyun Woo

Sung-Wook Cho

Dong-Hyun Woo

An image sensor may include: a pixel array having a plurality of pixels arranged in a matrix structure; and an image array including a plurality of image dots which are arranged in a matrix structure, and implemented by output signals of the respective pixels. The position of a first pixel in the pixel array may not correspond to the position of an image dot corresponding to the first pixel in the image array, and the position of a second pixel adjacent to the first pixel in the pixel array may correspond to the position of an image dot corresponding to the second pixel in the image array.

Image sensor

Disclosed is an image sensor, which includes a first PD isolation region for determining first to fourth PD regions, an FD isolation region formed between the first to fourth PD regions, and a floating diffusion formed in the FD isolation region. Horizontal distances from a perimeter of the floating diffusion to interfaces between the FD isolation region and the first to fourth PD regions are equal to each other.

Image sensor and methods for fabricating the same

An image sensor, comprising: a photoelectric conversion element; a transfer transistor formed over the photoelectric conversion element; and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are trench-type transistors and are symmetrical structure to each other with respect to the gap, wherein the photoelectric conversion element is a continuous layer under both the transfer transistor and the reset transistor, and is completely below the transfer transistor and the reset transistor.

An image sensor may include a pixel array. The pixel array may include a plurality of sub pixel arrays arranged two-dimensionally. Each of the plurality of sub pixel arrays may include a first pixel block and a second pixel block adjacent to the first pixel block in a row direction. Each of the first and second pixel blocks may include a light reception unit including first to fourth unit pixels arranged in a 2&#xd7;2 matrix structure and a driving circuit. The driving circuit of the first pixel block may be positioned at an upper side of the light reception unit of the first pixel block, and the driving circuit of the second pixel block may be positioned at a lower side of the light reception unit of the first pixel block. The upper side of the first pixel block and an upper side of the second pixel block may be aligned with each other in the row direction, and a lower side of the first pixel block and the lower side of the second pixel block may be aligned with each other in the row direction.

Image sensor with reduced fixed pattern noise

An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

An image sensor may include a pixel array that includes a plurality of pixel blocks arranged in an M&#xd7;N (where M and N are natural numbers) matrix structure, wherein, among the plurality of pixel blocks, when compared to any one pixel block as a first pixel block, any one pixel block as a second pixel block adjacent to the first pixel block in an M direction or an N direction has a planar shape that is obtained by inverting a planar shape of the first pixel block in the M direction. Each of the plurality of pixel blocks may include a light reception unit including a plurality of unit pixels which generate photocharges in response to incident light and are arranged in an m&#xd7;n matrix structure to have a shared pixel structure; and a driving circuit suitable for outputting an image signal corresponding to the photocharges.

An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

Image sensor and method for fabricating the same

An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

Image sensor including vertical transfer gate

This technology provides an image sensor and an electronic device including the same. In an image sensor including a pixel array including a plurality of unit pixels, each of the plurality of unit pixels may include a photoelectric conversion element and a pixel lens over the photoelectric conversion element and comprising a plurality of light condensing layers in which a lower layer has a larger area than an upper layer, wherein the pixel lens has a shape changing based on a position of a corresponding unit pixel from a center of the pixel array to an edge of the pixel array.

Image sensor and electronic device including the same

Image sensors are provided. The image sensor may include a photodiode formed in a substrate, a lower interlayer dielectric layer formed over the substrate, a drive transistor gate electrode formed over the lower interlayer dielectric layer, and a transfer transistor gate electrode including an upper portion and a lower portion. The upper portion of the transfer transistor gate electrode may be formed over the drive transistor gate electrode. The lower portion of the transfer transistor gate electrode may be formed in a pillar shape and vertically extends from the upper portion of the transfer transistor gate electrode through the drive transistor gate electrode and the lower interlayer dielectric layer into the substrate.

Image sensor including a transfer transistor having a vertical channel and pixel transistors having thin film channels

Provided are an image sensor, a method of manufacturing the image sensor, and an electronic device including the image sensor. An image sensor according to an embodiment may include a photoelectric conversion element, a pixel lens formed over the photoelectric conversion element and comprising a plurality of light condensing layers, wherein an upper layer of plurality of light condensing layers has a smaller area than a lower layer, and the pixel lens comprises a color filter substance.

Image sensor, method of manufacturing the image sensor, and electronic device including the image sensor

Disclosed are an image sensor including a light collection member having a multi-layer step shape and an electronic device including the same. This technology can improve light condensing efficiency in a unit pixel since a corresponding pixel lens is included. Furthermore, light condensing efficiency in a unit pixel can be improved more effectively by controlling the width of a corresponding pixel lens so that the pixel lens corresponds to the wavelength of incident light whose color has been separated by a corresponding color filter. As described above, quantum efficiency in the photoelectric conversion element can also be improved since light condensing efficiency in a unit pixel is improved. As a result, performance of the image sensor can be improved.

Growing community of inventors

Gyeonggi-do, South Korea

Cha-Young Lee