Taiwan Semiconductor Manufacturing Comp. Ltd.

Cha-Hon Chou

Shih-Hao Lin

Chih-Chuan Yang

Hsin-Wen Su

Chih-Hsuan Chen

Bwo-Ning Chen

Chih-Hsiang Huang

A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain feature within a source/drain region adjacent to the dummy gate. In some cases, the source/drain feature includes a bottom region and a top region contacting the bottom region at an interface interposing the top and bottom regions. In some embodiments, the method further includes performing a plurality of dopant implants into the source/drain feature. In some examples, the plurality of dopant implants includes implantation of a first dopant within the bottom region and implantation of a second dopant within the top region. In some embodiments, the first dopant has a first graded doping profile within the bottom region, and the second dopant has a second graded doping profile within the top region.

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Hsinchu, Taiwan

Cha-Hon Chou