Littelfuse, Inc.

Cesar Martinez

Marco Doms

Martin Schulz

Liutauras Storasta

Francois Perraud

Oluwaseun Kehinde Oyewole

A semiconductor device protection arrangement. The semiconductor device protection arrangement may include a semiconductor chip; a controller, coupled to the power semiconductor chip; and a temperature sensor, disposed in thermal contact with the semiconductor chip, where the temperature sensor includes a positive temperature indicator (PTI) component.

Overcurrent protection of power semiconductor packages using integrated positive temperature indicator

Circuitry and techniques for providing a bidirectional switch in devices for overcurrent protection and voltage protection are disclosed herein. In one embodiment, a circuit may include a first reverse-blocking insulating gate bipolar transistor (IGBT), having a first gate terminal, first collector terminal and a first emitter terminal. The circuit may include a second reverse-blocking IGBT, having a second gate terminal, a second collector terminal, electrically coupled to the first emitter terminal, and a second emitter terminal, electrically coupled to the first collector terminal. As such the first IGBT and the second IGBT may define a first current path, extending from the first collector to the second emitter; and a switch control circuit, coupled to send a control signal to at least one of: the first gate terminal and the second gate terminal, during an overcurrent event.

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Chicago, IL, United States of America

Cesar Martinez