Micron Technology Incorporated

Ceredig Roberts

Gurtej S Sandhu

Scott Jeffrey DeBoer

Werner Juengling

Sujit Sharan

Anand Srinivasan

David K Hwang

Chandra V Mouli

Sanh D Tang

Terry L Gilton

Alan R Reinberg

Gordon A Haller

Pary Baluswamy

Tim H Bossart

Kunal R Parekh

Ruojia R Lee

Keith R Cook

Thy Tran

Jim A Jozwiak

Dave Cheffings

Sanh Dang Tang

A method is disclosed for forming a memory device having buried access lines (e.g., wordlines) and buried data/sense lines (e.g., digitlines) disposed below vertical cell contacts. The buried wordlines may be formed trenches in a substrate extending in a first direction, and the buried digitlines may be formed from trenches in a substrate extending in a second direction perpendicular to the first direction. The buried digitlines may be coupled to a silicon sidewall by a digitline contact disposed between the digitlines and the silicon substrate.

Method of forming a DRAM array of devices with vertically integrated recessed access device and digitline

A memory device comprises an active area comprising a source and at least two drains defining a first axis. At least two substantially parallel word lines are defined by a first pitch, with one word line located between each drain and the source. Digit lines are defined by a second pitch, one of the digit lines being coupled to the source and forming a second axis. The active areas of the memory array are tilted at 45&#xb0; to the grid defined by the word lines and digit lines. The word line pitch is about 1.5F, while the digit line pitch is about 3F.

Memory device

Method of manufacturing a memory device

A capacitor structure for a semiconductor assembly and a method for forming same are described. The capacitor structure comprises a pair of electrically separated capacitor electrodes and a capacitor electrode being common to only the pair of electrically separated capacitor electrodes.

Capacitor structure for two-transistor DRAM memory cell and method of forming same

An integrated circuit which provides a FET device having reduced GIDL current is described. A semiconductor substrate is provided wherein active regions are separated by an isolation region and a gate oxide layer is provided on the active regions. A gate electrode is provided upon the gate oxide layer wherein beneath an edge of the gate electrode, a gate-drain overlap region having a high dose ion implant is provided.

Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxides MOSFETs

The present invention includes a residue-free overlay target, as well as a method of forming a residue-residue free overlay target. The residue-free overlay target of the present invention is defined by trenches or pads including a series of raised lines. The raised lines included in the overlay target of the present invention substantially eliminate any surface topography, such as depressions, at the top surface of overlying material layers, and, thereby, prevent accumulation of process residue which may obscure the overlay target and inhibit further processing. The method of the present invention may be accomplished and modified using process technology known in the semiconductor fabrication art and includes providing a semiconductor substrate, depositing a resist layer, patterning the resist, and executing a wet or dry etch to create at least one overlay target according to the present invention.

Residue free overlay target

The present invention includes a residue-free overlay target, as well as a method of forming a residue-free overlay target. The residue-free overlay target of the present invention is defined by trenches or pads including a series of raised lines. The raised lines included in the overlay target of the present invention substantially eliminate any surface topography, such as depressions, at the top surface of overlying material layers and, thereby, prevent accumulation of process residue which may obscure the overlay target and inhibit further processing. The method of the present invention may be accomplished and modified using process technology known in the semiconductor fabrication art and includes providing a semiconductor substrate, depositing a resist layer, patterning the resist, and executing a wet or dry etch to create at least one overlay target according to the present invention.

Raised-lines overlay semiconductor targets and method of making the same

A process for the fabrication of an integrated circuit which provides a FET device having reduced GIDL current is described. A semiconductor substrate is provided wherein active regions are separated by an isolation region, and a gate oxide layer is form on the active regions. Gate electrodes are formed upon the gate oxide layer in the active regions. An angled, high dose, ion implant is performed to selectively dope the gate oxide layer beneath an edge of each gate electrode in a gate-drain overlap region, and the fabrication of the integrated circuit is completed.

Method and device to reduce gate-induced drain leakage (GIDL) current in thin gate oxide MOSFETs

A method for providing semiconductor openings having a substantially straight wall or other desired etch profile. An etchable material layer is formed having target dopant levels or other etch rate varying characteristics to compensate for the characteristics of a selected etching process to achieve the desired etch profile. The etching process may also be varied to further match the characteristics of the etchable material layer.

Method of making straight wall containers and the resultant containers

An etching method includes providing a first insulating material layer on a substrate assembly surface and a second insulating material layer on the first insulating material layer. The first insulating material layer has an etch rate that is greater than the etch rate of the second insulating material layer when exposed to an etch composition. Portions of the first insulating material layer and the second insulating material layer are removed using at least the etch composition. Various types of structures (e.g., contacts, capacitors) are formed with use of the method.

Oxide etching method and structures resulting from same

A method of forming a transistor in a peripheral circuit of a random access memory device wherein a transistor gate, capacitor electrode or other component in the memory cell array is formed simultaneously with the formation of a transistor gate in the periphery.

Method of forming transistors in a peripheral circuit of a semiconductor memory device

Exemplary embodiments of the present invention disclose process steps to form high aspect ratio structures, such as a capacitor during semiconductor fabrication by the steps of: forming a first layer of planarized boro-phospho-silicate glass (BPSG) material over a conductive region; forming a first opening in said first layer of planarized BPSG material, said first opening aligning to said conductive region; forming a planarized polysilicon material into said first opening; forming a second layer of planarized BPSG material directly on said first layer of planarized BPSG material and said planarized polysilicon material; forming a second opening in said second layer of planarized BPSG material to expose a major portion of said planarized polysilicon material; removing said planarized polysilicon material to expose said underlying conductive region, said step of removing said planarized polysilicon comprises an etch possessing an etching selectivity ratio of polysilicon material to BPSG material that is greater than,; forming a conformal conductive silicon layer into said first and second openings that makes contact with said conductive region; patterning said conformal conductive silicon layer into a first capacitor plate; forming a capacitor dielectric over said first capacitor plate, said first capacitor plate having an aspect ratio with the length being greater than the width; forming a second capacitor plate over said capacitor dielectric.

Growing community of inventors

Boise, ID, United States of America

Ceredig Roberts