Flusso Limited

Cambridge Semiconductor Limited

Cerdin Lee

Florin Udrea

Syed Zeeshan Ali

Christopher James Rosser

Andrea De Luca

Ethan Gardner

Tim Butler

We disclose herein a flow sensor comprising: a first substrate comprising an etched portion, a dielectric region located on a first side of the first substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the first substrate, a sensing element located on or within the dielectric membrane, and a second substrate adjoining a second side of the first substrate. The first side of the first substrate and the second side of the first substrate are opposite sides. The first substrate and the second substrate cooperate to form a sensing channel through the flow sensor.

Flow sensor

We disclose herein a flow sensor assembly comprising a first substrate, a flow sensor located over the first substrate, a lid located over the flow sensor, a flow inlet channel, and a flow outlet channel. A surface of the flow sensor and a surface of the lid cooperate to form a flow sensing channel between the flow inlet channel and the flow outlet channel, and a surface of the flow sensing channel is substantially flat throughout the length of the flow sensing channel.

Sensor assembly

A high voltage/power semiconductor device has a semiconductor layer having a high voltage terminal end and a low voltage terminal end. A drift region extends between the high and low voltage terminal ends. A dielectric layer is provided above the drift region. An electrical conductor extends across at least a part of the dielectric layer above the drift region, the electrical conductor being connected or connectable to the high voltage terminal end. The drift region has plural trenches positioned below the electrical conductor. The trenches extend laterally across at least a part of the drift region in the direction transverse the direction between the high and low voltage terminal ends of the semiconductor layer, each trench containing a dielectric material. The trenches improve the distribution of electric field in the device in the presence of the electrical conductor.

Semiconductor device and method of forming a semiconductor device

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Trumpington, United Kingdom

Cerdin Lee