Micron Technology Incorporated

Qromis, Inc.

Bridgelux Incorporated

Cree Gmbh

Cree Sweden Ab

Other

Mosaid Technologies Corporation

Round Rock Research, LLC

Cree Dulles, Inc.

Cem Basceri

Gurtej S Sandhu

Vladimir Odnoblyudov

Garo Jacques Derderian

Ozgur Aktas

Demetrius Sarigiannis

Shari Farrens

F Daniel Gealy

Thomas Gehrke

Thomas M Graettinger

Mark R Visokay

Durai Vishak Nirmal Ramaswamy

H Montgomery Manning

Trung Tri Doan

Er-Xuan Ping

Ronald Allen Weimer

Lingyi A Zheng

Dan Gealy

Lyle D Breiner

Kevin L Beaman

Eric Blomiley

David J Kubista

Dilip Risbud

Casey R Kurth

Christopher Harris

Martin F Schubert

Ammar Derraa

Philip H Campbell

Irina V Vasilyeva

Vishnu Kumar Agarwal

Scott H West

Chris M Carlson

Sam Yang

Kevin Tetz

Zhengqing Gan

Howard E Rhodes

Kunal R Parekh

Donald L Westmoreland

Matthew W Miller

Marsela Pontoh

Steven D Cummings

Peng Chen

Cengiz Balkas

Nancy Alzola

Charles Martin Watkins

Kevin G Donohoe

Dinesh Chopra

Weimin Li

John M Drynan

T Warren Weeks, Jr

Steve Cummings

Tom Graettinger

Eugene P Marsh

Brian A Vaartstra

Joel A Drewes

Husam N Al-Shareef

Andrei Konstantinov

Robert Tyler Leonard

Calvin H Carter, Jr

Adrian Powell

Christopher W Hill

Jason Ronald Jenny

Paul Castrovillo

Yuri Khlebnikov

Igor Khlebnikov

Paul J Castovillo

Murat N Silan

Hudson McD Hobgood

Vijay Balakrishna

Valeri T Tsvetkov

Daniel Gealy

Kent Bertilsson

M R Visokay

J M Drynan

F Dan Gealy

Nikolay Yushin

Elif Berkman

Adrian R Powell

Hudson Mcd Hobgood

Various aspects of a light emitting apparatus includes a substrate. Various aspects of the light emitting apparatus include a light emitting die arranged on the substrate. The light emitting die includes one or more side walls. Various aspects of the light emitting apparatus include a reflective die attach material extending along the one or more side walls of the light emitting die.

LED array package

A monolithic microwave integrated circuit (MMIC) system includes a growth substrate, a device layer coupled to the growth substrate, a plurality of MMIC device elements coupled to the device layer, and a plurality of metallization structures coupled to the plurality of MMIC device elements. The MMIC system also includes a carrier substrate coupled to the plurality of metallization structures and a cooling structure coupled to the carrier substrate.

Systems for fabrication of MMIC and RF devices on engineered substrates

An engineered substrate structure includes a ceramic substrate having a front surface characterized by a plurality of voids, and a barrier layer encapsulating the ceramic substrate. The barrier layer defining a plurality of valleys corresponding to the plurality of voids. The engineered substrate structure further includes a first bonding layer comprising a bonding layer material and coupled to the barrier layer on the front surface of the ceramic substrate. The first bonding layer defines a plurality of fill regions filled with the bonding layer material in the plurality of valleys corresponding to the plurality of voids. The engineered substrate structure further includes a second bonding layer coupled to the first bonding layer, and a substantially single crystalline layer joined to the second bonding layer.

Polycrystalline ceramic substrate

An engineered substrate structure includes a ceramic substrate having a front surface characterized by a plurality of peaks. The ceramic substrate includes a polycrystalline material. The engineered substrate structure also includes a planarization layer comprising a planarization layer material and coupled to the front surface of the ceramic substrate. The planarization layer defines fill regions filled with the planarization layer material between adjacent peaks of the plurality of peaks on the front surface of the ceramic substrate. The engineered substrate structure further includes a barrier shell encapsulating the ceramic substrate and the planarization layer, wherein the barrier shell has a front side and a back side, a bonding layer coupled to the front side of the barrier shell, a single crystal layer coupled to the bonding layer, and a conductive layer coupled to the back side of the barrier shell.

Polycrystalline ceramic substrate and method of manufacture

A substrate includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the first adhesion layer, a second adhesion layer coupled to the barrier layer, and a conductive layer coupled to the second adhesion layer. The substrate also includes a bonding layer coupled to the support structure, a substantially single crystal silicon layer coupled to the bonding layer, and an epitaxial semiconductor layer coupled to the substantially single crystal silicon layer.

Engineered substrate structures for power and RF applications

Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

Back-to-back solid state lighting devices and associated methods

Some embodiments of the disclosure provide for a lighting system including a substrate. The lighting system includes several blue light emitting diodes (LEDs) supported by the substrate. The lighting system includes at least one red LED supported by the substrate. The lighting system includes a light conversion material covering the blue LEDs and the at least one red LED.

Chip-on-board design with color mixing

A substrate including a support structure. The support structure including a polycrystalline ceramic core and a first adhesion layer coupled to the polycrystalline ceramic core. The support structure further including a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The substrate further including a bonding layer coupled to the support structure. The substrate further including a substantially single crystal layer comprising at least one of silicon carbide, sapphire, or gallium nitride coupled to the bonding layer. The substrate further including an epitaxial semiconductor layer coupled to the substantially single crystal layer.

A method of forming a doped gallium nitride (GaN) layer includes providing a substrate structure, including a gallium nitride layer, forming a dopant source layer over the gallium nitride layer, and depositing a capping structure over the dopant source layer. The method also includes annealing the substrate structure to diffuse dopants into the gallium nitride layer, removing the capping structure and the dopant source layer, and activating the diffused dopants.

Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources

An integrated circuit device includes an engineered substrate including a substantially single crystal layer and a buffer layer coupled to the substantially single crystal layer. The integrated circuit device also includes a plurality of semiconductor devices coupled to the buffer layer. The plurality of semiconductor devices can include a first power device coupled to a first portion of the buffer layer and a second power device coupled to a second portion of the buffer layer. The first power device includes a first channel region comprising a first end, a second end, and a first central portion disposed between the first end and the second end. The second power device includes a second channel region comprising a third end, a fourth end, and a second central portion disposed between the third end and the fourth end.

Integrated circuit devices with an engineered substrate

Methods of manufacturing device assemblies, as well as associated semiconductor assemblies, devices, systems are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a semiconductor device assembly that includes a handle substrate, a semiconductor structure having a first side and a second side opposite the first side, and an intermediary material between the semiconductor structure and the handle substrate. The method also includes removing material from the semiconductor structure to form an opening extending from the first side of the semiconductor structure to at least the intermediary material at the second side of the semiconductor structure. The method further includes removing at least a portion of the intermediary material through the opening in the semiconductor structure to undercut the second side of the semiconductor structure.

Methods, devices, and systems related to forming semiconductor power devices with a handle substrate

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Boise, ID, United States of America

Cem Basceri