Ecole Polytechnique Federale De Lausanne

Cem Alper

Mihai Adrian Ionescu

Nilay Dagtekin

Livio Lattanzio

Teodor Rosca

Luca De Michielis

A charge sensing device for sensing charge variations in a charge storage area includes: a TFET having at least one sense gate; and a capacitive coupling for coupling the charge storage area with the sense gate.

Sensing device for sensing minor charge variations

The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length extending in said elongated direction and is positioned on a first side of the at least one elongated semiconductor structure, and the second gate has a length extending in said elongated direction and is positioned on a second opposing side of the at least one elongated semiconductor structure. The first and second gates extend along the first and second sides of the at least one elongated semiconductor structure to define an overlap zone sandwiched between the first gate and the second gate, said overlap zone extending the full length of the first and/or second gate along the at least one elongated semiconductor structure.

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Lausanne, Switzerland

Cem Alper