Stmicroelectronics (grenoble 2) Sas

Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Cedric Tubert

Francois Roy

Pascal Mellot

Nicolas Moeneclaey

Gregory Roffet

Alexandre Mas

Jeremie Teyssier

Stephane Drouard

John Brunel

Matteo Maria Vignetti

Arnaud Authie

Stephane Mougin

Abdessamed Mekki

An embodiment light sensor includes an array of pixels arranged in rows and in columns. Each pixel comprises a photodiode, a sense node coupled to the photodiode, and an initialization transistor connected to the sense node. N successive pixels of a column or of a row are associated, where N is greater than or equal to 2. The initialization transistor of a first one of the pixels arranged at one end of the association of the N pixels is connected between the sense node of the first one of the pixels and a node of application of an initialization potential. For each two successive pixels among the N pixels, the initialization transistor of one of the pixels that is the most distant from the end is connected between the sense nodes of the two pixels.

Light sensor

An embodiment device for synchronizing the emission and the reception of a light signal for a time-of-flight sensor comprises a power-control circuit configured to generate and transmit a power signal based on a control signal for controlling the sensor, the power signal being configured to supply power to an array of pixels of the sensor, a production module for producing a synchronization signal, which module is configured to produce the synchronization signal based on the control signal, and a switch configured to supply power to a light source of a device for emitting the light signal, the production module being further configured to transmit the synchronization signal to the switch such that the time taken to produce and transmit the synchronization signal and the time taken to generate and transmit the power signal are identical.

Sychronization device, associated time of flight sensor and method

The present disclosure relates to a read-out circuit comprising N inputs configured to be connected to N respective outputs of a pixel array of an image sensor, with N being an integer strictly greater than 1; and N analog-to-digital converters organized in K groups, with K being an integer strictly greater than 1 and strictly less than N, and each having a first input coupled to a respective one of the N inputs and a second input. In each group, the second inputs of the analog-to-digital converters of the group are connected together, electrically decoupled from the second inputs of the analog-to-digital converters of the other groups, and configured to receive a first reference signal that is identical for all the analog-to-digital converters of the group.

Reading circuit for a pixel array

In an embodiment, a method includes: receiving data signals from a plurality of pixels of an array of pixels; generating a plurality of signal-to-noise ratios by determining signal-to-noise ratios for each respective pixel of the plurality of pixels on the basis of the data signals received from the respective pixel; and filtering the data signals received from each pixel of the plurality of pixels by using an adaptive filter configured on the basis of the plurality of the signal-to-noise ratios to generate filtered data signals.

Filtering device, associated system and method

The invention concerns a device including: first and second detectors of the phase and/or of the frequency of an input signal with respect to first and second reference signals; and a Sigma/Delta converter interpreting outputs of the first or of the second phase and/or frequency detector to determine a propagation time of the input signal.

Device for determining a propagation time

A circuit includes a pixel structure having a photo sensitive element and a read transistor. The read transistor includes a first load path terminal coupled to the photo sensitive element, and a second load path terminal coupled to a voltage bus. The circuit also includes a first transistor having a third load path terminal coupled to a power supply node, and a fourth load path terminal configured to be coupled to a current source. The circuit further includes a first control switch coupled between the voltage bus and the fourth load path terminal of the first transistor.

Image sensor with improved settling time

A counter circuit includes a first Johnson counter circuit and a second Johnson counter circuit coupled in cascade. Each Johnson counter circuit includes a clock input, a data input, a first clock data output, a second clock data output and a feedback from the second clock data input to first data input. The clock input of the first Johnson counter circuit is configured to receive an input clock signal. The clock input of the second Johnson counter circuit is connected to the second clock data output of the first Johnson counter circuit. A ripple counter circuit has a clock input and additional clock data outputs. The clock input of the ripple counter circuit is connected to the second clock data output of the preceding Johnson counter circuit.

Counter circuit

An image sensor includes a first photodiode with associated first sense node and a second photodiode with associated second sense node. A first transistor has its control node coupled to the first sense node and a second transistor has its control node coupled to the second sense node. The conduction paths (for example, source-drain paths) of the first and second transistors are coupled in series between first and second column lines associated with a column of the image sensor array. Switches control connection of the first and second column lines in two modes: one mode where a voltage is applied to the first column line and data from one of the photodiodes is read out by the second column line; and another mode where a voltage is applied to the second column line and data from the other of the photodiodes is read out by the first column line.

Pixel circuit with fast read out

A device for transferring charges photogenerated in a portion of a semiconductor layer delimited by at least two parallel trenches, each trench including, lengthwise, at least a first and a second conductive regions insulated from each other and from the semiconductor layer, including the repeating of a first step of biasing of the first conductive regions to a first voltage to form a volume accumulation of holes in the area of this portion located between the first regions, while the second conductive regions are biased to a second voltage greater than the first voltage, and of a second step of biasing of the first regions to the second voltage and of the second regions to the first voltage.

Device for transferring photogenerated charges at high frequency and applications

The present disclosure relates to a method for adjusting a bias voltage of a SPAD photodiode, comprising successive steps of: applying to the photodiode a first test bias voltage lower than a normal bias voltage applied to the photodiode in a normal operating mode, subjecting the photodiode to photons, reading a first avalanche triggering signal of the photodiode, applying to the photodiode a second test bias voltage, different from the first test bias voltage, subjecting the photodiode to photons, reading a second avalanche triggering signal of the photodiode, increasing the normal bias voltage if the first and second signals indicate that the photodiode did not avalanche trigger, and reducing the normal bias voltage if the first and second signals indicate that the photodiode did avalanche trigger.

Method and device for adjusting the bias voltage of a SPAD photodiode

A method for reading a pixel, including at least two integration periods, at least one of said periods including at least one integration sub-period, wherein an output value of the pixel is determined by taking into account the amounts of photogenerated charges contained in the pixel at the end of each of said periods and the amount of photogenerated charges stored in a photodiode of the pixel beyond a threshold during said at least one sub-period.

Pixel read method

A method for detecting an attack, such as by laser, on an electronic microcircuit from a backside of a substrate includes forming the microcircuit on the semiconductor substrate, the microcircuit comprising a circuit to be protected against attacks, forming photodiodes between components of the circuit to be protected, forming a circuit for comparing a signal supplied by each photodiode with a threshold value, and forming a circuit for activating a detection signal when a signal at output of one of the photodiodes crosses the threshold value.

Growing community of inventors

Sassenage, France

Cedric Tubert