Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Commissariat a L'energie Atomique

Cedric Durand

Frederic Gianesello

Romain Pilard

Fabrice Casset

Pascal Ancey

Daniel Gloria

Ophelie Foissey

Jean-Christophe Ricard

An integrated optoelectronic or optical device is formed by a polarization-splitting grating coupler including two optical waveguides, a common optical coupler and flared optical transitions between the optical coupler and the optical waveguides. The optical coupler is configured for supporting input/output of optical waves. A first region of the optical coupler lies at a distance from the flared optical transitions. The first region includes a first recessed pattern. Second regions of the optical coupler lie between the first region and the flared optical transitions, respectively, in an adjoining relationship. The second regions include a second recessed pattern different from the first recessed pattern.

Polarization-splitting granting coupler (PSGC) integrated optoelectronic or optical device

A transformer of the balanced-unbalanced type includes a primary inductive circuit and a secondary inductive circuit housed inside an additional inductive winding connected in parallel to the terminals of the secondary circuit and inductively coupled with the primary circuit and the secondary circuit.

Transformer of the balanced-unbalanced type

A passive filter may include at least one elliptical filter unit and at least one asymmetric rejection filter unit coupled in series with the elliptical filter unit. The at least one asymmetric rejection filter unit may have a frequency response curve that includes a dip with different attenuations on either side, and an overshoot upon exiting the dip at the side with the lower attenuation.

Passive filter

A semiconductor device includes a substrate. On at least one face of that substrate, integrated circuits are formed. At least one electromagnetic waveguide is also included, that waveguide including two metal plates that are placed on either side of at least one part of the thickness of the substrate and are located facing each other. Two longitudinal walls are placed facing each other and are formed by metal vias made in holes passing through the substrate in its thickness direction. The metal vias electrically connect the two metal plates.

Semiconductor device comprising an electromagnetic waveguide

Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence:

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St. Martin d'Heres, France

Cedric Durand