Seagate Technology Incorporated

Cedric Bedoya

Wei Tian

Insik Jin

Venugopalan Vaithyanathan

Markus Siegert

Tong Zhao

Andreas Karl Roelofs

A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region.

Tunneling transistors

A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and has an asymmetric energy barrier between the reference voltage electrode and the variable voltage electrode, with the energy barrier having a relatively maximum energy barrier level proximate the reference voltage electrode and a minimum energy barrier level proximate the variable voltage electrode.

Asymmetric barrier diode

A single annealing process simultaneously creates local areas of ferroelectric imprint that can be used as markers, and areas with low leakage current that exhibit ideal symmetric switching on ferroelectric recording media.

Growing community of inventors

Edina, MN, United States of America

Cedric Bedoya