Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Cecilia W Kiarie

Shintaro Yamada

Suzanne M Coley

Paul J LaBeaume

Li Cui

Yuanqiao Rao

Yasmin N Srivastava

Christopher P Sullivan

Robert L Auger

Bhooshan C Popere

Paul Joseph Popa

John D Weaver

Roxanne M Jenkins

Jeffrey L Fenton, Jr

Jessica P Evans

Jr Jeffrey L Fenton

Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from the these compositions can be easily removed during processing without the need for a separate removal step.

Silicon-based hardmask

Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from these compositions can be easily removed during processing without the need for a separate removal step.

Compositions and antireflective coatings for photolithography

Compositions for use in microelectronic applications:    R10, R11, R12, R13 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl.

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Marlborough, MA, United States of America

Cecilia W Kiarie