Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Ce Ning

Hehe Hu

Guangcai Yuan

Zhengliang Li

Wei Yang

Lizhong Wang

Nianqi Yao

Jiayu He

Xiaochen Ma

Liping Lei

Jie Huang

Xin Gu

Tianmin Zhou

Kun Zhao

Yunping Di

Ke Fei Wang

Xinhong Lu

Binbin Tong

Dongfang Wang

Wenlin Zhang

Zhanfeng Cao

Fengjuan Liu

Feng Guan

Feifei Li

Chao Li

Rui Huang

Jianbo Xian

Fuqiang Li

Qi Qi

Song Liu

Fangzhen Zhang

Shuilang Dong

Jiushi Wang

Dapeng Xue

Zhen Zhang

Chengfu Xu

Wei Liu

Qi Yao

Chen Hui Xu

Xin Yang

Chunping Long

Xiao Lin Zhang

Zhijun Lv

Zhenyu Zhang

Zheng Fang

Tao Gao

Chenyang Zhang

Jing Yang

Hui Guo

Jing Feng

Ke Wang

Jiahui Han

Xue Ping Liu

Zhi Wang

Xuehui Zhang

Jianming Sun

Xue Dong

Changfeng Li

Feng Qu

Lei Chen

Jing Li

Hui Zhang

Zhi Hu Wang

Shi Shu

Xianqin Meng

Mingchao Li

Yong Yu

Chuanxiang Xu

Seongyeol Yoo

Pengxia Liang

Yingwei Liu

Zhiwei Liang

Yunsik Im

Jiaxiang Zhang

Xuefei Sun

Xiaohu Li

Yang Yue

Wusheng Li

Liwei Liu

Dini Xie

Hongrun Wang

Shunhang Zhang

Jianhua Du

Shipei Li

Shuang Sun

Xin Xie

Seung Jin Choi

Zhaohui Qiang

Tailiang Li

Shanshan Xu

Zhuo Hua Li

Xiaochun Xu

Woobong Lee

Weiting Peng

Dongsheng Yin

Changhan Hsieh

Yawei Wang

Chen Xu

Yan Qu

Xiao Zhang

The present disclosure provides a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a circuit layer disposed on a base substrate, an emitting structure layer and a photoelectric structure layer disposed on a side of the circuit layer away from the base substrate, the circuit layer includes at least one impurity absorption layer and at least one transistor, the transistor includes an active layer, and at least one insulation layer is provided between the impurity absorption layer and the active layer; an atomic ratio of a silicon element to a nitrogen element in the impurity absorption layer is 1:5 to 1:35.

Display substrate and preparation method thereof, and display apparatus

Provided is a display substrate including a substrate and a plurality of light emitting units and a plurality of light detection units located on the substrate, At least one light emitting unit includes a light emitting element and a pixel circuit connected to the light emitting element, and at least one light detection unit includes an optical sensing element and a light emitting detecting circuit connected to the optical sensing element. At least one inorganic hydrogen barrier layer is arranged on one side of the optical sensing element close to the substrate. The light emitting element has a first light emitting region and a second light emitting region, the first light emitting region of the light emitting element emits light from a side away from the substrate, and the second light emitting region of the light emitting element emits light from a side close to the substrate.

Display substrate, manufacturing method thereof, and display apparatus

Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.

Thin film transistor, display substrate and display device

An array substrate and a display panel, relating to the technical field of display. The array substrate includes a base substrate, and a thin film transistor group which is provided on one side of the base substrate and includes at least two thin film transistors, the thin film transistors being stacked in a direction perpendicular to the base substrate.

Array substrate and display panel

An array base plate includes a substrate; and a driving transistor and a switching transistor that are located on the substrate; the driving transistor includes a semiconductor layer; the switching transistor includes an active layer and a protecting layer, and the active layer includes two opposite main surfaces and a side surface that is located between outer contours of the two main surfaces; the protecting layer is located on a main surface of the active layer that is away from the substrate and covers the main surface and the side surface; the protecting layer and the semiconductor layer are arranged in a same layer, and a material of the protecting layer and a material of the semiconductor layer are a same metal-oxide-semiconductor material; and a carrier mobility of the protecting layer is less than a carrier mobility of the active layer.

Metal-oxide thin-film transistor, array base plate and fabricating method thereof

A circuit board includes a substrate, a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer includes a plurality of first conductive portions. The second conductive layer includes a plurality of second conductive portions. A second conductive portion passes through a first via hole in the first insulating layer to be in electrical contact with a first conductive portion. The first conductive layer and the second conductive layer each include at least one main conductive layer, which is capable of creating a first intermetallic compound with solder. At least one of the first conductive layer and the second conductive layer further includes a stop layer capable of creating a second intermetallic compound with the solder. A rate of a reaction between the stop layer and the solder is lower than a rate of a reaction between the main conductive layer and the solder.

Circuit board, light-emitting substrate, backlight module, and display apparatus

Disclosed are a thin film transistor and a manufacturing method therefor, a displaying base plate and a displaying apparatus. The thin film transistor includes an active layer, a first insulating layer and a gate layer which are disposed in stack, wherein the active layer includes a source contact area, a drain contact area, and a channel area connecting the source contact area and the drain contact area; the channel area includes a first channel area, a first resistance area and a second channel area sequentially disposed in a first direction; the gate layer includes a first gate and a second gate which are separately disposed; an orthographic projection of the first gate on a plane where the active layer is located covers the first channel area; and an orthographic projection of the second gate on a plane where the active layer is located covers the second channel area.

Displaying base plate and manufacturing method thereof, and displaying device

A thin film transistor, a shift register unit, a gate driving circuit and a display panel are provided. The M source branches and the N drain branches extend along a first direction and are arranged at intervals; in each of the P source-drain units, the M source branches and the N drain branches are alternately arranged, and M is greater than or equal to N; a semiconductor layer includes sub-channel regions between one drain branch and one source branch adjacent to each other; a sum of widths of the sub-channel regions of the P source-drain units in the first direction is W, and an average length of the sub-channel regions of the P source-drain units in a direction perpendicular to the first direction is L; 12≤W/L≤400, P, M and N are integers greater than or equal to 1, and P×N≥4.

Thin film transistor, shift register unit, gate driving circuit and display panel

Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer; where a material of the oxidization protective layer includes tungsten.

Array substrate and display apparatus comprising oxidization protective layer on copper conductive layer

The present application provides an array substrate, a manufacturing method for the same, and a display panel. The array substrate includes a display area and a non-display area connected to the display area, and the display area includes a plurality of sub-pixels arranged in an array. The non-display area includes at least one polysilicon transistor, each of the sub-pixels includes an oxide transistor and a pixel electrode. A gate of the oxide transistor as well as a first electrode and a second electrode of the polysilicon transistor are arranged in a same layer; an active layer of the oxide transistor and the pixel electrode are arranged in a same layer, and are in contact with each other. The active layer of the oxide transistor includes an oxide semiconductor material, and the pixel electrode includes an oxide conductor material.

Array substrate and manufacturing method for the same, display panel

At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.

Oxide thin film transistor and preparation method thereof, and display device

Provided is an array substrate. The array substrate includes a display region and a non-display region located at a periphery of the display region, wherein the array substrate includes a substrate; a first transistor and a second transistor that are disposed on the substrate, wherein the first transistor is disposed in the display region, and the second transistor is disposed in the non-display region; and a data line and a pixel electrode that are disposed in the display region, wherein the data line is disposed on a side of the first active layer close to the substrate and is lapped with the first active layer, and the pixel electrode is disposed on a side of the first gate facing away from the substrate and is lapped with the first active layer.

Array substrate and manufacturing method thereof, and display panel

A color filter, a preparation method therefore, an array substrate and a display device are provided. The color filter includes a plurality of filter units () provided on a base substrate () for transmitting light of different colors, and a light shielding layer () located between adjacent filter units () for transmitting light of different colors. The filter unit () includes a first surface facing the base substrate (), a second surface facing away from the base substrate, and a third surface connecting the first surface and the second surface. The light shielding layer () is provided on the third surface of at least one of two adjacent filter units () transmitting light of different colors.

Color filter and preparation method therefor, array substrate and display device

A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate. The micro-nano channels have a high resolution or an ultra-high resolution, and have different sizes and shapes.

Micro-nano channel structure, sensor and manufacturing method thereof, and microfluidic device

An array substrate includes a base substrate, a driving circuit layer, and a functional device layer which are sequentially stacked; the driving circuit layer is provided with first driving circuits, and each first driving circuit at least includes a driving transistor; and the driving circuit layer includes a first gate layer, a first gate insulation layer, a semiconductor layer, a second gate insulation layer, a second gate layer, an interlayer dielectric layer, and a source-drain metal layer which are sequentially stacked on one side of the base substrate.

Array substrate and display panel including electrically connected gates

Growing community of inventors

Beijing, China

Ce Ning