The Boc Group, Inc.

Linde Aktiengesellschaft

Linde Gmbh

Praxair Technology, Inc.

The Boc Group, Inc. (a Delaware Corporation)

Penta Pro Materials Inc.

Ce Ma

Qing Min Wang

Ashwini K Sinha

Richard A Hogle

Patrick Joseph Helly

Atul M Athalye

Jennifer Bugayong Luna

Kee-Chan Kim

Atul Athalye

Ying Chieh Hu

Wen Che Kuo

Kuochou Yeh

Carl Jackson

Paul Mittonette

David Milner

Laura Joy Miller

Graham Anthony McFarlane

Patrick J Helly

Methods for selectively etching SiGe relative to Si are provided. Some of the methods incorporate formation of a passivation layer on a surface of the Si layer to enhance SiGe etchant selectivity and the use of interhalogen gases that preferentially etch the SiGe as opposed to the Si in the presence of the passivation layer. The methods can occur in a cyclic manner until the desired thickness of the SiGe layer is obtained.

Methods for gas phase selective etching of silicon-germanium layers

Systems and processes for gas phase-phase synthesis of trisilylamine. One system includes a reactor vessel having a top, bottom, and sidewall having an inner surface. The reactor vessel includes inlets for gaseous reactants, and a gas inlet for an inert gas. In certain reactors the gas inlets are positioned near the top of the reactor vessel and configured to inject the reactant gases in the reactor substantially vertically and downward therefrom. Other reactors are cyclonic-shaped with tangential feeding of the gases. One or more baffles having a peripheral edge and substantially horizontally positioned in the reactor to define a reaction zone above the baffles and a separation zone below the baffles. The baffles are positioned in the reactor vessel such that there is a gap between the baffle peripheral edge and the inner surface of the reactor vessel. Certain systems and processes include mechanical or static mixers.

Systems and processes for production of trisilylamine

A method for inhibiting the formation of carbonyl compounds in a gas cylinder containing carbon monoxide wherein the gas cylinder is in fluid communication with a valve assembly wherein the valve assembly connects to a threaded opening in the gas cylinder by a threaded assembly by coating interior and exterior components of the valve assembly selected from the group consisting of an inlet port, an outlet port, a diaphragm and a lower spindle with an amorphous hydrogenated silicon compound. A valve assembly containing the coated interior and exterior components is also disclosed.

Cylinder valves and methods for inhibiting the formation of contaminants in cylinders and cylinder valves

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Method for pretreating and recovering a rare gas from a gas contaminant stream exiting an etch chamber

Solution-based precursors for use as starting materials in film deposition processes, such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition. The solution-based precursors allow for the use of otherwise solid precursors that would be unsuitable for vapor phase deposition processes because of their tendency to decompose and solidify during vaporization.

Solution based precursors

Precursor source containers to hold precursor materials used in thin film deposition processes, such as ALD and MOCVD methods are described. In particular, the container holds both a liquid precursor or a dissolved precursor solution and a rinse solvent in separate chambers, and reduces the overall space requirement. In one embodiment, a cylinder within a cylinder arrangement provides two separate chambers, one for the precursor solution and the other for the rinse solvent.

Container for precursors used in deposition processes

Processes for forming full graphene wafers on silicon or silicon-on-insulator substrates. The processes comprise formation of a metal carbide layer on the substrate and annealing of the metal carbide layer under high vacuum. For volatile metals, this annealing step results in volatilization of the metal species of the metal carbide layer and reformation of the carbon atoms into the desired graphene wafer. Alternatively, for non-volatile metals, the annealing step results in migration of the metal in the metal carbide layer to the top surface of the layer, thereby forming a metal rich top layer. The desired graphene layer is formed by the carbon atoms left at the interface with the metal rich top layer. The thickness of the graphene layer is controlled by the thickness of the metal carbide layer and by solid phase reactions.

Formation of graphene wafers on silicon substrates

A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Method and apparatus for using solution based precursors for atomic layer deposition

The use of a polyhedral oligomeric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligomeric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.

Methods for forming low-k dielectric films

Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film

Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2.0 to 2.5.

Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film

Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated circuits are disclosed. A Si&mdash;O&mdash;C-in-ring cyclic siloxane precursor compound is applied to the surface by chemical vapor deposition where it will react with the surface and form a film having a dielectric constant, k, less than 2.5. The compound generally has the formula (&mdash;O&mdash;R &mdash;O&mdash;)SiR R or the formula (&mdash;R &mdash;O&mdash;)SiR R .

Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI&mdash;O&mdash;C, and uses thereof

A method and apparatus for measuring metallic impurities within a fluid by X-ray fluorescence in which a sample stream flowing at a constant flow rate is passed through a microporous filter. The microporous filter contains substantially no metallic impurities and is configured to adsorb the particulate solid phase and vapor phase of the compounds. Excitation of the metallic compounds by X-ray produces an X-ray florescence having an intensity that can be measured. The change in intensity is compared with that produced by a calibrated inflow of a standard gas sample to derive the impurity concentration. In a preferred embodiment, the filter is housed within a chamber having a window that is preferably fabricated from Beryllium so as not to appreciably attenuate the X-rays.

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Apex, NC, United States of America

Ce Ma