Axcelis Technologies, Inc.

Advanced Ion Beam Technology, Inc.

Other

Applied Materials, Inc.

Axcells Technologies, Inc.

Jen, Causon Ko-chuan

Niu, Huan

Chen, Chien-hsu

Causon Ko-Chuan Jen

Marvin Farley

Zhimin Wan

John D Pollock

William Bintz

Mike Ameen

Shu Satoh

Hilton Frank Glavish

Donald Wayne Berrian

Don Berrian

Chien Hsu Chen

Huan Niu

Genise Bonacorsi

Chien-Hsu Chen

A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

Apparatus and method for metal contamination control in an ion implantation system using charge stripping mechanism

A composition for neutron capture therapy and a method of preparing the same are provided. The composition includes at least one nanodiamond particle and at least one neutron capture element, in which the at least one neutron capture element is embedded into the at least one nanodiamond particle by using an ion implantation system.

Ion implantation of neutron capture elements into nanodiamond particles to form composition for neutron capture therapy usage

An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

Wafer cooling system and method

Wafer cooling apparatus and method

An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Angular scanning using angular energy filter

An ion implantation system and method for implanting ions at varying energies across a workpiece is provided. The system comprises an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam. A mass analyzer is positioned downstream of the ion source and configured to mass analyze the ion beam. A deceleration/acceleration stage is positioned downstream of the mass analyzer. An energy filter may form part of the deceleration/acceleration stage or may positioned downstream of the deceleration/acceleration stage. An end station is provided having a workpiece support associated therewith for positioning the workpiece before the ion beam is also provided. A scanning apparatus is configured to scan one or more of the ion beam and workpiece support with respect to one another. One or more power sources are operably coupled to one or more of the ion source, mass analyzer, deceleration/acceleration stage, and energy filter. A controller is configured to selectively vary one or more voltages respectively supplied to one or more of the deceleration/acceleration stage and the energy filter concurrent with the scanning of the ion beam and/or workpiece support, wherein the selective variation of the one or more voltages is based, at least in part, on a position of the ion beam with respect to the workpiece support.

Ion implantation system and method with variable energy control

A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Implant method and implanter by using a variable aperture

A charged particle filter provides a curved through path and has both magnetic poles for applying a magnetic field normal to the plane of curvature of the path and electrodes for applying a radial electric field. The filter is used as an energy filter downstream of an accelerator in an ion implanter. The filter can be set to provide a range of energy dispersions, to operate as an achromatic bend, or to reject lower charge state ions.

Apparatus and method for charged particle filtering and ion implantation

Growing community of inventors

San Jose, CA, United States of America

Causon Ko-Chuan Jen