Globalfoundries Inc.

International Business Machines Corporation

Globalfoudries Inc.

Cathryn Jeanne Christiansen

Fen Chen

Tom C Lee

Ping-Chuan Wang

Anthony K Stamper

Timothy Dooling Sullivan

Erdem Kaltalioglu

Ronald Gene Filippi, Jr

Michael Anthony Shinosky

Daniel C Edelstein

Shom Ponoth

Son Van Nguyen

Kirk David Peterson

Hosadurga K Shobha

Satyanarayana Venkata Nitta

Kaushik Chanda

Andrew A Turner

Roger Aime Dufresne

Ian McCallum-Cook

Andrew H Norfleet

Jeffrey P Gambino

John Atkinson Fifield

Baozhen Li

Ronald G Filippi

Wagdi William Abadeer

William Joseph Murphy

Eric D Hunt-Schroeder

Alvin Wayne Strong

Nicholas A Polomoff

Andrew Tae Kim

Jonathan Daniel Chapple-Sokol

Deborah M Massey

Richard Steven Kontra

Zhuojie Wu

Anil Kumar

Prakash Periasamy

Tian Shen

Yuncheng Song

Charles W Griffin

Patrick Ryan Justison

Chad M Burke

Seungman Choi

Kong Boon Yeap

Dimitris P Ioannou

Linjun Cao

Joseph E Therrien

An integrated circuit (IC) structure includes a back end of line (BEOL) stack on a substrate, the BEOL stack having a plurality of metal layers therein and a plurality of inter-level dielectric (ILD) layers therein. The plurality of metal layers includes a lowermost metal layer and an uppermost metal layer. A pair of metal guard structures proximate a perimeter of the BEOL stack concentrically surrounds the active circuitry. Each metal guard structure includes a continuous metal fill between the lowermost metal layer and the uppermost metal layer of the plurality of metal layers. A set of interdigitating conductive elements within one of the plurality of metal layers includes a first plurality of conductive elements electrically coupled to one of the pair of metal guard structures interdigitating with a second plurality of conductive elements electrically coupled to the other of the pair of metal guard structures.

IC structure with interdigitated conductive elements between metal guard structures

An exemplary apparatus includes a testing module connected to, and providing a test voltage to, an integrated circuit containing devices under test. The testing module performs a time-dependent dielectric breakdown (TDDB) test on the devices under test. A decoder is connected to the devices under test and the testing module. The decoder selectively connects each device being tested to the testing module. Efuses are connected to a different one of the devices under test. The efuses separately electrically disconnect each of the devices under test from the test voltage upon failure of a corresponding device under test. Protection circuits are connected between the efuses and a ground voltage. Each protection circuit provides a shunt around the decoder upon failure of the device under test.

Parallel test structure

Interconnect structures for a security application and methods of forming an interconnect structure for a security application. A sacrificial masking layer is formed that includes a plurality of particles arranged with a random distribution. An etch mask is formed using the sacrificial masking layer. A hardmask is etched while masked by the etch mask to define a plurality of mask features arranged with the random distribution. A dielectric layer is etched while masked by the hardmask to form a plurality of openings in the dielectric layer that are arranged at the locations of the mask features. The openings in the dielectric layer are filled with a conductor to define a plurality of conductive features.

Interconnect structures for a security application

An integrated circuit (IC) structure is disclosed. The structure can include: an insulator positioned over a device layer; a capping layer positioned over the insulator; an inter-layer dielectric (ILD) positioned over the capping layer; a first metal wire positioned over the ILD, and outside an active area of the IC structure; a continuous metal crack stop in contact with, and interposed between, the first metal wire and the device layer, such that the continuous metal crack stop extends through at least the insulator, the capping layer, and the ILD; a second metal wire positioned over the ILD, and within the active area of the IC structure; and two vias vertically coupled to each other and interposed between the second metal wire and the device layer, such that the two vias extend through at least the insulator, the capping layer, and the ILD.

Integrated circuit structure with continuous metal crack stop

A system for electromigration testing is disclosed. The system includes a conductive member, a cap layer of insulative material over at least a portion of a top surface of the conductive member, a cathode conductively connected to a first end of the conductive member; an anode conductively connected to a second end of the conductive member, and a current source conductively connected to the cathode and the anode. A plurality of sensory pins are disposed along a length of the conductive member between the first end and the second end of the conductive member. The sensory pins are conductively connected to a bottom surface of the conductive member. At least one measurement device is conductively connected to at least one sensory pin of the plurality of sensory pins. The at least one measurement device determines a resistance of at least one portion of the conductive member.

Electromigration testing of interconnect analogues having bottom-connected sensory pins

Structures for a chip, as well as methods of fabricating such chip structures. The chip including a portion of a substrate, an active circuit region associated with the portion of the substrate, an interconnect structure on the active circuit region, and a crackstop extending through the interconnect structure. A groove extends through the interconnect structure to the substrate at a location exterior of the crackstop. A stress-containing layer is formed on at least a portion of the groove.

Edge compression layers

Wiring structures with dummy metal features and methods of manufacture are disclosed. A structure includes a metal wiring structure, and dummy metal features in electrical and direct physical contact with the metal wiring structure in a same plane as the metal wiring structure. The dummy metal features do not change a resistance of the metal wiring structure and are remote from other structures.

Wiring structures

Interconnect structures and related methods of manufacture improve device reliability and performance by selectively incorporating dopants into conductive lines. Multiple seed layer deposition steps or variable trench bottom areas are used to locally control the dopant concentration within the interconnect structures at the same wiring level, which provides a robust integration approach for metallizing interconnects in future-generation technology nodes.

Interconnect structures with variable dopant levels

Approaches for providing a liner at a via-to-wire interface are provided. A method includes: forming a via opening that exposes an upper surface of a copper wire; forming a titanium liner on the upper surface of the wire; forming a tungsten liner on the titanium liner; and forming a via on the second liner in the via opening.

Titanium tungsten liner used with copper interconnects

Aspects of the present disclosure provide an integrated circuit (IC) test structure. An IC structure according to the present disclosure can include: a monitor chain having a first end electrically connected to a second end through a plurality of metal wires each positioned within one of a first metal level and a second metal level, wherein the first metal level is vertically separated from the second metal level; a first test wire positioned within the first metal level and extending in a first direction, wherein the first test wire is electrically insulated from the monitor chain; and a second test wire positioned within the second metal level and extending in a second direction, wherein the second test wire is electrically insulated from the monitor chain and the first test wire, and wherein the first direction is different from the second direction.

Integrated circuit (IC) test structure with monitor chain and test wires

Aspects of the present invention relate to a self-correcting power grid for a semiconductor structure and a method of using thereof. Various embodiments include a self-correcting power grid for a semiconductor structure. The power grid may include a plurality of interconnect layers. Each of the plurality of interconnect layers may include a plurality of metal lines, where each of the plurality of metal lines are positioned substantially parallel to one another and substantially perpendicular to a plurality of distinct metal lines in adjacent interconnect layers. Additionally the interconnect layers may include a plurality of fuses formed within each of the metal lines of the plurality of interconnect layers. In the power grid, at least one of the fuses positioned immediately adjacent to a defect included in the power grid may be configured to blow during a testing process to isolate the defect.

Method of self-correcting power grid for semiconductor structures

Self-correcting power grid for semiconductor structures method

Kerf areas are located between the integrated circuit chips on a wafer. Via chain test structures are located in the kerf areas or test chips. The via chain test structures comprise a first conductor in a first area of the wafer. First via chains are connected at individual points to the first conductor. Each of the first via chains comprises an open-ended electrical circuit beginning at the first conductor and ending in an insulated region of a second area of the wafer. The via chain test structures comprise a second conductor in the second area. Second via chains are connected at individual points to the second conductor. Each of the second via chains comprises an open-ended electrical circuit beginning at the second conductor and ending in an insulated region of the first area.

Alternating open-ended via chains for testing via formation and dielectric integrity

A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge.

Thermal sensor for semiconductor circuits

A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.

Method for fabricating air gap interconnect structures

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Huntington, VT, United States of America

Cathryn Jeanne Christiansen