Lam Research Corporation

Catherine Zhou

Hong Shih

Armen Avoyan

Duane Outka

Cliff La Croix

Tuochuan Huang

Jason Augustino

Yaobo Yin

John Edward Daugherty

Chun Yan

Brian K McMillin

Jerome S Hubacek

Allan Kent Ronne

Enrico Magni

Daxing Ren

Bruno Morel

Cliff LaCroix

Bi Ming Yen

Paul Mulgrew

Dae J Lim

Dougyong Sung

An adapter plate configured to be attachable to a universal platen of a cleaning unit for cleaning upper electrodes from a plasma processing chamber is disclosed, the adapter plate includes a support surface and a mounting surface configured to be fastened to the universal platen of the cleaning unit. The support surface is configured to support an inner electrode or an outer electrode of a showerhead electrode assembly for cleaning upper or lower surfaces thereof. The support surface having a first set of holes configured to receive pins engaged in an upper surface of the inner electrode, a second set of holes configured to receive pins surrounding an outer periphery of the inner electrode, a third set of holes configured to receive pins engaged in an upper surface of the outer electrode, and a fourth set of holes configured to receive pins surrounding an outer periphery of the outer electrode.

Adapter plate for polishing and cleaning electrodes

A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen secured to the polishing, which can comprise a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts and mount receptacles can be configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The silicon electrode can be polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode. Additional embodiments are contemplated, disclosed and claimed.

Platen and adapter assemblies for facilitating silicon electrode polishing

An injector cleaning apparatus with a concentric dual flow introducer and a flow-dispersing injector seat along with a method of cleaning an injector. The concentric dual flow introducer has concentric cleaning fluid flowpaths configured to communicate with a central passage and a plurality of peripheral passages of a gas injector. The input-side injector engaging interface of the concentric dual flow introducer and the flow-dispersing injector seat each have a compressible sealing portion having compressibility sufficient to yield under fluid cleaning surges attributable to initiation and termination of cleaning fluid flow through the injector cleaning apparatus along with resiliency sufficient to prevent abutment of the gas injector and a rigid facing portion of the input-side injector engaging interface and output-side injector engaging interface respectively.

System and method for cleaning gas injectors

In accordance with one embodiment of the present disclosure, an electrode carrier assembly is provided including an electrode carrying annulus and a plurality of electrode mounting members. The electrode carrying annulus includes an electrode containment sidewall that forms an inner or outer radius of the electrode carrying annulus. The electrode carrying annulus further includes a plurality of radial sidewall projections that project radially away from the electrode containment sidewall. The radial sidewall projections each include an upward-facing tapered spacer including an upward-facing micro-mesa. The electrode mounting members each include a downward-facing tapered spacer including a downward-facing micro-mesa. The electrode mounting members are rotatably engaged with the electrode carrying annulus, and are configured to rotate between a free position and a bracketed position.

Electrode carrier assemblies

A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen. The dual function electrode platen is secured to the polishing turntable and comprises a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts complement respective positions of mount receptacles formed in a platen engaging face of the silicon electrode to be polished. The electrode mounts and the mount receptacles are configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The dual function electrode platen further comprises platen adapter abutments positioned radially inward of the electrode mounts. The platen adapter abutments are configured to bring a platen adapter into approximate alignment with the rotary polishing axis. The silicon electrode is polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary motion to the engaged silicon electrode, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode rotates about the rotary polishing axis. Additional embodiments are contemplated, disclosed and claimed.

In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.

Electrode securing platens and electrode polishing assemblies incorporating the same

Methods of cleaning backing plates of electrode assemblies, or electrode assemblies including a backing plate and an electrode plate are provided. The methods can be used to clean backing plates and electrode plates made of various materials, such as silicon electrode plates and graphite and aluminum backing plates. The backing plates and electrode assemblies can be new, used or refurbished. A flushing fixture that can be used in the cleaning methods is also provided, the flushing fixture comprising a base plate comprising a recessed inner portion including and an upper surface configured to support the backing plate or the electrode assembly, and a cover plate configured to cover the base plate, the cover plate including at least one liquid passage through which a flushing liquid is introduced into an interior of the flushing fixture defined by the base plate and cover plate.

Methods and apparatus for wet cleaning electrode assemblies for plasma processing apparatuses

A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed.

Immersive oxidation and etching process for cleaning silicon electrodes

A method for cleaning an electrode assembly comprising a backing plate bonded to an electrode plate for a plasma processing assembly, the method including the steps of contacting the backing plate and electrode plate with a solvent; spraying the backing plate and electrode plate with water; ultrasonically cleaning the electrode assembly; enclosing the electrode assembly in a flushing fixture defined by a base plate having a plurality of liquid passages and a cover plate configured to cover the base plate, the cover plate including at least one liquid passage; and flushing the electrode assembly in the flushing fixture by introducing a flushing liquid under pressure through said at least one liquid passage in the cover plate.

Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.

Methods for silicon electrode assembly etch rate and etch uniformity recovery

A non-destructive and simple method for cleaning a new or used electrostatic chuck comprises a wet cleaning process, which removes contaminants deposited on a surface of the electrostatic chuck.

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Fremont, CA, United States of America

Catherine Zhou