Pragmatic Printing Limited

Plastic Logic Limited

Flexenable Limited

Catherine Ramsdale

Richard John Price

Henning Sirringhaus

Brian Hardy Cobb

Feras Alkhalil

William Henry Reeves

Kieran Reynolds

Timothy Allan Von Werne

Kevin Jacobs

Paul A Cain

Joao De Oliveira

Scott Darren White

Neil Davies

Tim Von Werne

Rashmi Bhintade

Anoop Menon

William Reeves

Anthony Sou

Martin Lewis

Martin Jackson

Dean Bradley Baker

Jerome Joimel

Frank Placido

Ken Williamson

Dean Baker

A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal. Methods of manufacturing such structures are also disclosed.

Methods of manufacturing electronic structures

Electronic structure having two field effect transistors

A method of manufacturing an electronic circuit comprises: providing an electronic circuit having a first configuration in which the circuit comprises a resistive element having a first resistance, and irradiating at least a part of the resistive element with electromagnetic radiation to change the resistance of the resistive element from the first resistance to a second resistance, the second resistance being lower than the first resistance. A method of storing data comprises: receiving a piece of data to be stored; determining a number according to the data; and irradiating at least part of a resistive element with that number of pulses of electromagnetic radiation to change a resistance of the resistive element from a first resistance to a second resistance, the second resistance being lower than the first resistance. A difference between the first resistance and the second resistance is dependent on the number. Corresponding circuits and data storage systems are disclosed.

Electronic circuit and data storage system

A method of manufacturing an electronic device comprises: providing a layer of semiconductor material comprising a first portion, a second portion, and a third portion, the third portion connecting the first portion to the second portion and providing a semiconductive channel for electrical current flow between the first and second portions; providing a gate terminal arranged with respect to said third portion such that a voltage may be applied to the gate terminal to control an electrical conductivity of said channel; and processing at least one of the first and second portions so as to have an electrical conductivity greater than an electrical conductivity of the channel when no voltage is applied to the gate terminal. In certain embodiments, the processing comprises exposing at least one of the first and second portions to electromagnetic radiation. The first and second portions may be laser annealed to increase their conductivities.

Semiconductor electronic devices and methods of manufacture thereof

A multiple layer pixel architecture for an active matrix display is provided having a common bus line on a metal level separate from that on which the gate electrodes of the thin-film transistors (TFTs) are formed. A multilayer electronic structure includes a TFT for driving a pixel of an active matrix optoelectronic device and a capacitor for storing charge to maintain an electrical state of said active matrix pixel, wherein the structure includes a substrate bearing at least four conducting layers separated by at least three dielectric layers, first and second ones of said conducting layers defining drain/source electrodes and a gate electrode of said transistor respectively, and third and fourth ones of said conducting layers defining respective first and second plates of said capacitor, wherein said capacitor and said transistor are laterally positioned such that they overlap in a vertical direction.

Multiple conductive layer TFT

An electronic circuit comprises: an input terminal; an output terminal; first and second supply rails; first, second, third, and fourth field effect transistors, FETs, each of a first type and each having respective gate, source and drain terminals; and first and second loads. The source of the first FET is connected to the first supply rail, the drain of the first FET and the source of the second FET are connected to the output terminal, the drain of the second FET is connected to the second supply rail, the gate of the third FET and the gate of the fourth FET are connected to the input terminal, the drain of the third FET is connected to the second supply rail, the first load is connected between the first supply rail and the source of the third FET, and the second load is connected between the drain of the fourth FET and the second supply rail. In one aspect of the invention, the gate of the first FET is connected to a node between the source of the third FET and the first load such that a voltage at the source of the third FET is applied to the gate of the first FET, and the gate of the second FET is connected to a node between the drain of the fourth FET and the second load such that a voltage at the drain of the fourth FET is applied to the gate of the second FET.

Electronic circuits

A multiple layer pixel architecture for an active matrix display is provided in which a common bus line is formed on a metal level which is separate from that on which the gate electrodes of the thin-film transistors (TFTS) are formed. A multilayer electronic structure adapted to solution deposition, the structure includes a TFT for driving a pixel of an active matrix optoelectronic device and a capacitor for storing charge to maintain an electrical state of said active matrix pixel, wherein the structure includes a substrate bearing at least four conducting layers separeted by at least three dielectric layers, first and second ones of said conducting layers defining drain/source electrodes and a gate electrode of said transistor respectively, and third and fourth ones of said conducting layers defining respective first and second plates of said capacitor, and wherein said capacitor and said transistor are laterally positioned such that they overlap in a vertical direction.

A device comprising an array of transistors, including: patterned conductive layers located at lower and upper levels in a stack of layers on a substrate, which patterned conductive layers define gate conductors and source-drain electrodes of the array of transistors; wherein the stack of layers further comprises a dielectric layer below said lower level, and a further patterned conductive layer below said dielectric layer; and wherein said further patterned conductive layer both provides an electrical function in said array of transistors via said dielectric layer, and defines openings via which the dielectric layer serves to increase the strength of adhesion between the device substrate and the patterned conductive layer at said lower level.

Electronic devices

A technique for isolating electrodes on different layers of a multilayer electronic device across an array containing more than 100000 devices on a plastic substrate. The technique comprises depositing a bilayer of a first dielectric layer () of a solution-processible polymer dielectric and a layer of parylene () to isolate layers of conductor or semiconductor on different levels of the device. The density of defects located in the active area of one of the multilayer electronic devices is typically more than 1 in 100000.

Reducing defects in electronic switching devices

A process of forming an electronic device, by forming the source and drain contacts using photolithography, incorporating a self-assembled monolayer (SAM) over the electrical contacts to form an increased work function of the source and drain electrodes and further forming more favorable charge injection properties or within the channel region to improve film morphology and therefore improve charge transport. The SAM material is added to the photoresist stripper during a step of the photolithography process of forming electrical contacts.

Method and apparatus for the formation of an electronic device

A method for forming an electronic device including at least one electrically conductive and one semiconductive material deposited from solution, the method comprising: forming on the substrate a confinement structure consisting of a least a first zone and a second zone, depositing the electrically conductive material on the substrate, wherein the electrically conductive material is absent from both the first and second zone, and subsequently depositing the electrically semiconductive material from solution, wherein the semiconductive material is absent from the first zone, but not from the second zone.

Active layer island

A rectifying diode comprising a semiconducting layer, a first electrode, and a second electrode, wherein the width of the region of closest contact between the two electrodes is on the order of the thickness of the semiconducting layer.

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Cambridge, United Kingdom

Catherine Ramsdale