Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik

Catherine Dubourdieu

Patrick Steglich

Christian Mai

Andreas Mai

Veeresh Deshpande

Dong-Jik Kim

The present invention relates to a slot waveguide formed by a vertical material stack comprising a top layer with a first refractive index, a center layer including a ferroelectric material and with a second refractive index, and a SiGepseudosubstrate layer with 0<x≤1 and with a third refractive index. The center layer is grown on the SiGepseudosubstrate layer. The second refractive index is lower than the first refractive index and lower than the third refractive index. The slot waveguide can be included in a phase-shifter including two vertically arranged electrodes configured for providing a vertical electrical field (E) extending between the top layer and the bottom layer of the slot waveguide and for providing a complementary-metal-oxide-semiconductor compatible driver voltage. The phase-shifter can be configured for providing a linear electro-optical effect inside the center layer of the slot waveguide.

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Berlin, Germany

Catherine Dubourdieu